upg155tb Renesas Electronics Corporation., upg155tb Datasheet

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upg155tb

Manufacturer Part Number
upg155tb
Description
L-band Spdt Switch
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
upg155tb-E3
Manufacturer:
NXP
Quantity:
3 000
Document No. P13654EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DESCRIPTION
cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low
insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy
to install and contributes to miniaturizing the system.
FEATURES
• Low Insertion Loss
• High Linearity Switching: P
• Small 6-pin super minimold package (Size: 2.0
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• PCS, WLAN, and WLL applications
ORDERING INFORMATION
The PG155TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample
Caution The IC must be handled with care to prevent static discharge because its circuit is composed of
Part Number
PG155TB-E3
order:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
GaAs MES FET.
PG155TB)
Marking
G1L
: L
INS
in (1 dB)
= 0.75 dB TYP. @V
6-pin super minimold
L-BAND SPDT SWITCH
= +34 dBm TYP. @V
The mark
Package
DATA SHEET
shows major revised points.
1.25
CONT
CONT
= +3.0 V/0 V, f = 2 GHz
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel.
0.9 mm)
GaAs INTEGRATED CIRCUIT
= +3.0 V/0 V, f = 2 GHz
Supplying Form
PG155TB
©
1998, 1999

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upg155tb Summary of contents

Page 1

DESCRIPTION The PG155TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Control Voltage CONT1, 2 Input Power P in Total Power Dissipation P tot Operating Temperature T A Storage Temperature T stg Note Condition 2 – V CONT1 CONT2 Remarks ...

Page 3

ELECTRICAL CHARACTERISTICS (Unless otherwise specified + Off chip DC blocking capacitors value; 51 pF) Parameter Symbol Insertion Loss L INS Isolation ISL Input Return Loss RL in Output Return Loss RL out Input Power at ...

Page 4

TYPICAL CHARACTERISTICS (ON) TEST CONDITIONS V CONT OUT1 IN OUT2 50 IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY CH1 S log MAG 10 dB/REF MARKER 1 1 GHz 0 –10 1 –20 3 ...

Page 5

TYPICAL CHARACTERISTICS (OFF) TEST CONDITIONS V CONT1 CONT2 OUT1 IN OUT2 50 IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY CH1 S log MAG 10 dB/REF MARKER 1 1 GHz 0 1 ...

Page 6

TEST CIRCUIT T = +25qC CONT1 CONT2 Off chip DC blocking capacitors value pF 000 pF (Bypass), using NEC standard evaluation board EVALUATION ...

Page 7

TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE V V CONT2 CONT( CONT(L) IN Note In case High or V CONT1 CONT2 input signal of IN (Pin 5) is output from OUT1 ...

Page 8

RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. conditions other than those recommended below, contact your NEC sales representative. Soldering Method Infrared Reflow Package peak temperature: 235 C or below Time: 30 seconds or less ...

Page 9

Data Sheet P13654EJ2V0DS00 PG155TB 9 ...

Page 10

Data Sheet P13654EJ2V0DS00 PG155TB ...

Page 11

Data Sheet P13654EJ2V0DS00 PG155TB 11 ...

Page 12

The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the ...

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