cph3430 Sanyo Semiconductor Corporation, cph3430 Datasheet
cph3430
Manufacturer Part Number
cph3430
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.CPH3430.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CPH3430
Manufacturer:
Sanyo
Quantity:
42 000
Part Number:
cph3430-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENN8175
CPH3430
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : ZF
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =1mA, V GS =0
V DS =60V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =1A, V GS =2.5V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
CPH3430
Conditions
Conditions
2
0.8mm)
11205PE TS IM TA-100257
min
0.4
1.8
60
Ratings
typ
Ratings
170
190
325
3.6
29
21
17
40
27
11
--55 to +150
Continued on next page.
max
150
220
270
1.3
60
10
10
2
8
1
1
No.8175-1/4
Unit
m
m
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
S
W
V
V
A
A
A
A
C
C
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cph3430 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH3430 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...
Page 2
... V DD =30V PW= =10V 0 0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit = =30 V OUT CPH3430 2.5 3.0 IT06813 120 140 160 IT06815 No.8175-2/4 ...
Page 3
... Drain Current =30V I D =2. 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature CPH3430 0.2 1.0 IT06816 1000 V DD =30V = 100 ...
Page 4
... Note on usage : Since the CPH3430 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...