cph3439 Sanyo Semiconductor Corporation, cph3439 Datasheet - Page 2

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cph3439

Manufacturer Part Number
cph3439
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Continued from preceding page.
Package Dimensions
unit : mm
2152A
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
1
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
0
3
0
0
2.9
1.9
0.05
2
1A
Parameter
1
0.4
0.10
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
I D =2.5A
0.15
3
R DS (on) -- V GS
0.20
I D -- V DS
4
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
0.25
5
0.30
0.05
6
Symbol
V SD
Qgs
Qgd
Qg
0.35
7
0.40
8
Ta=25 C
V DS =10V, V GS =4V, I D =4.5A
V DS =10V, V GS =4V, I D =4.5A
V DS =10V, V GS =4V, I D =4.5A
I S =4.5A, V GS =0
0.45
IT08415
IT08417
9
CPH3439
0.50
10
Conditions
Switching Time Test Circuit
P.G
4V
0V
80
70
60
50
40
30
20
10
PW=10 s
D.C. 1%
8
6
4
2
0
--60
0
V IN
--40
--20
0.5
V IN
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
G
50
0
min
R DS (on) -- Ta
20
I D -- V GS
1.0
V DD =15V
D
40
Ratings
S
typ
I D =2.5A
R L =6
60
0.85
CPH3439
8.6
1.8
2.4
1.5
80
V OUT
max
100
1.2
2.0
120
V DS =10V
No.8129-2/4
140
IT08416
IT08418
Unit
nC
nC
nC
V
160
2.5

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