mch3427 Sanyo Semiconductor Corporation, mch3427 Datasheet

mch3427

Manufacturer Part Number

mch3427

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH3427.pdf (4 pages)

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Ordering number : ENN7746

MCH3427

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : ZC

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

Ultrahigh-speed switching.

1.8V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V GSS

V DSS

t d (on)

t d (off)

I GSS

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

t r

t f

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0

V DS =20V, V GS =0

V GS = 8V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =2A

I D =2A, V GS =4V

I D =1A, V GS =2.5V

I D =0.5A, V GS =1.8V

V DS =10V, f=1MHz

See specified Test Circuit.

MCH3427

Conditions

0.8mm)

min

0.4

2.9

62504 TS IM TA-4239

Ratings

typ

Ratings

400

4.9

--55 to +150

Continued on next page.

max

150

110

1.3

No.7746-1/4

Unit

Related parts for mch3427

mch3427 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH3427 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... = PW= =10V 0.2 0.4 0.6 0.8 1.0 1.2 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit 1 OUT MCH3427 1.4 1.6 1.8 IT07049 120 140 160 IT07051 No.7746-2/4 ...

Page 3

... Drain Current 4 =10V I D =4A 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH3427 0.3 1.0 10 IT07052 1000 V DD =10V 100 7 5 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. MCH3427 PS No.7746-4/4 ...

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