cph6405 Sanyo Semiconductor Corporation, cph6405 Datasheet

cph6405

Manufacturer Part Number

cph6405

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.CPH6405.pdf (4 pages)

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Ordering number : ENN7369

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : KE

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-state resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =1mA, V GS =0

V DS =30V, V GS =0

V GS = 8V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =3A

I D =3A, V GS =4V

I D =1A, V GS =2.5V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

CPH6405

Conditions

Package Dimensions

unit : mm

2151A

Conditions

0.8mm)

2.9

0.95

[CPH6405]

0.4

min

N-Channel Silicon MOSFET

0.4

6.3

32603 TS IM TA-1932

Ratings

typ

Ratings

0.15

Continued on next page.

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : CPH6

CPH6405

--55 to +150

max

0.05

150

1.6

1.3

No.7369-1/4

Unit

Related parts for cph6405

cph6405 Summary of contents

Page 1

... I D =1mA DSS V DS =30V GSS 8V (off =10V =1mA yfs V DS =10V = (on =3A = (on =1A =2.5V N-Channel Silicon MOSFET CPH6405 [CPH6405] 0. Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 0 ...

Page 2

... See specified Test Circuit See specified Test Circuit =10V =10V =6A Qgs V DS =10V =10V =6A Qgd V DS =10V =10V = =6A =15V OUT CPH6405 2.0 2.5 3.0 IT05419 70 Tc= ...

Page 3

... Drain Current =10V Total Gate Charge 2.0 1.6 1.5 1.0 0 100 Ambient Temperature CPH6405 =10V 0.001 0.3 0.4 10 IT05423 ...

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2003. Specifications and information herein are subject to change without notice. CPH6405 PS No.7369-4/4 ...

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cph6405 Sanyo Semiconductor Corporation, cph6405 Datasheet

cph6405

Related parts for cph6405

cph6405 Summary of contents

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