DSS2515M DIODES [Diodes Incorporated], DSS2515M Datasheet - Page 3

• Manufacturer Part Number: DSS2515M
• Description: 15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
DSS2515M
Document number: DS31816 Rev. 3 - 2
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.0
0.8
0.6
0.4
0.2
0
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Characteristic
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
@T
A
= 25°C unless otherwise specified
I = 1mA
I = 2mA
I = 4mA
I = 3mA
B
B
B
I = 5mA
B
B
Symbol
V
R
V
BV
BV
BV
V
C
I
I
CE(sat)
CE(sat)
BE(sat)
BE(on)
h
CBO
EBO
f
FE
obo
CBO
CEO
EBO
T
2
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3 of 5
Min
200
150
250
15
15
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
800
700
600
500
400
300
200
100
0
Fig. 5 Typical DC Current Gain vs. Collector Current
1
Max
100
100
150
250
500
1.1
0.9
50
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
T = -55°C
T = 85°C
T = 25°C
T = 150°C
T = 125°C
A
A
A
A
A
-I , COLLECTOR CURRENT (mA)
C
MHz
Unit
mΩ
mV
nA
μA
nA
pF
⎯
V
V
V
V
V
10
I
I
I
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
E
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
CE
= 100μA, I
= 500mA, I
= 500mA, I
= 100μA, I
= 10mA, I
= 10mA, I
= 200mA, I
= 500mA, I
= 5V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 15V, I
= 15V, I
= 10V, f = 1.0MHz
= 5V, I
C
C
C
C
C
C
Test Condition
B
B
E
E
= 0
E
C
= 10mA
= 100mA
= 500mA
= 100mA
= 100mA, f = 100MHz
100
B
B
B
B
= 0
= 0
= 0, T
= 0.5mA
= 0
= 0
= 10mA
= 50mA
= 50mA
= 50mA
A
DSS2515M
= 150°C
© Diodes Incorporated
January 2011
1,000