BYV32-150 PHILIPS [NXP Semiconductors], BYV32-150 Datasheet

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BYV32-150

Manufacturer Part Number
BYV32-150
Description
Rectifier diodes ultrafast
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

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BYV32-150
Manufacturer:
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BYV32-150
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Quantity:
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Part Number:
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Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated high efficiency dual
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits
conduction and switching losses are
essential.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Neglecting switching and reverse current losses
October 1994
Rectifier diodes
ultrafast
SYMBOL PARAMETER
V
V
V
I
I
I
I
I
T
T
O(AV)
O(RMS)
FRM
FSM
2
PIN
t
stg
j
tab
RRM
RWM
R
1
2
3
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
in
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
RMS forward current
Repetitive peak forward current t = 25 s;
per diode
Non-repetitive peak forward
current per diode
I
Storage temperature
Operating junction temperature
2
general
DESCRIPTION
t for fusing
where
1
low
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
V
I
t
O(AV)
rr
RRM
F
CONDITIONS
square wave
sinusoidal
a = 1.57; T
T
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
mb
RWM(max)
= 0.5; T
115 ˚C
tab
PARAMETER
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
mb
1 2 3
1
mb
= 0.5;
115 ˚C
118 ˚C
BYV32-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
MAX.
0.85
100
100
a1
20
25
-100
100
100
100
MAX.
0.85
MAX.
150
150
Product specification
-150
20
25
150
150
150
125
137
150
150
20
18
28
20
78
BYV32 series
k
MAX.
0.85
-200
200
200
200
200
200
20
25
Rev 1.100
a2
UNIT
UNIT
A
˚C
˚C
ns
V
V
V
A
A
A
A
A
A
V
V
A
2
s

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BYV32-150 Summary of contents

Page 1

... CONDITIONS square wave = 0.5; T 115 ˚C mb sinusoidal a = 1.57; T 118 ˚ 0.5; T 115 ˚ 8.3 ms sinusoidal; with reapplied V RWM(max Product specification BYV32 series MAX. MAX. MAX. UNIT 100 150 200 100 150 200 V 0.85 0.85 0. ...

Page 2

... -dI / -dI /dt = 100 -dI / 100 ˚ / Product specification BYV32 series MIN. TYP. MAX. UNIT - - 2.4 K 1.6 K K/W MIN. TYP. MAX. UNIT - 0.72 0. 1.00 1. 0.2 ...

Page 3

... Fig.5. Maximum t fr Tmb(max 114 1000 D = 1.0 0.5 126 100 138 150 f(I ) per Fig.6. Maximum t F F(AV) 3 Product specification BYV32 series BYV32 Tmb(max 1 1.57 2.2 2 IF(AV f(I F factor = F(RMS) F(AV) trr / ns IF=10A IF= dIF/dt (A/us ˚C; per diode rr j ...

Page 4

... Fig.9. Typical and maximum forward characteristic 100 IF=1A 10 1.0 1.0 100 Fig.10. Maximum Q Zth (K/ 0.1 0. Fig.11. Transient thermal impedance; per diode; 4 Product specification BYV32 series typ max 0.5 1 f(V ); parameter IF=10A 100 -dIF/dt (A/us ˚C; per diode ...

Page 5

... Net Mass 3,0 max not tinned max (2x) Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.12. TO220AB; pin 2 connected to mounting base. 5 Product specification BYV32 series 4,5 max 1,3 5,9 min 15,8 0,6 2,4 Rev 1.100 max ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Product specification BYV32 series Rev 1.100 ...

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