qm1000ha-2hb Mitsumi Electronics, Corp., qm1000ha-2hb Datasheet
qm1000ha-2hb
Available stocks
Related parts for qm1000ha-2hb
qm1000ha-2hb Summary of contents
Page 1
... 3–M4 LABEL MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE • I Collector current ...................... 1000A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 42 8– ...
Page 2
... V =4. =600V, I =1000A, I =2A, –I =20A Transistor part Diode part Conductive grease applied MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE Ratings 1000 1000 1000 7 1000 1000 7000 50 10000 –40~+150 –40~+125 2500 8.85~10.8 90~110 kg· ...
Page 3
... I =800A (A) B MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) V =4. =25° =125° COLLECTOR CURRENT I ...
Page 4
... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 7 COLLECTOR-EMITTER REVERSE VOLTAGE QM1000HA-2HB INSULATED TYPE 600 800 1000 1200 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125°C j 0.8 1.2 1 ...
Page 5
... FORWARD CURRENT QM1000HA-2HB INSULATED TYPE =600V = –I =20A =25° =125°C j –1 ...