upa860td Renesas Electronics Corporation., upa860td Datasheet

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upa860td

Manufacturer Part Number
upa860td
Description
Npn Silicon Rf Twin Transistor ? ? ? ?
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. PU10067EJ01V0DS (1st edition)
Date Published January 2002 CP(K)
Printed in Japan
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5435, 2SC5786)
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
ORDERING INFORMATION
3-pin thin-type ultra super minimold part No.
PA860TD
PA860TD-T3
Remark To order evaluation samples, contact your nearby sales office.
Q1: High-gain transistor
Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
f
f
NF = 1.4 dB TYP. @ V
T
T
= 12.0 GHz TYP., S
= 20.0 GHz TYP., S
The unit sample quantity is 50 pcs.
50 pcs (Non reel)
10 kpcs/reel
CE
21e
21e
Quantity
IN A 6-PIN LEAD-LESS MINIMOLD
= 1 V, I
2
2
= 8.5 dB TYP. @ V
= 13.0 dB TYP. @ V
C
= 5 mA, f = 2 GHz, Z
DATA SHEET
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
NPN SILICON RF TWIN TRANSISTOR
CE
CE
2SC5435
= 3 V, I
= 1 V, I
Q1
S
= Z
C
C
= 10 mA, f = 2 GHz
opt
= 20 mA, f = 2 GHz
Supplying Form
2SC5786
Q2
PA860TD
NEC Compound Semiconductor Devices 2002

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upa860td Summary of contents

Page 1

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor f = 12.0 GHz TYP 21e Q2: Low phase distortion ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current Total Power Dissipation P tot Junction Temperature Storage Temperature T 2 Note Mounted on 1.08 cm 1.0 ...

Page 3

ELECTRICAL CHARACTERISTICS (T (1) Q1 Parameter Symbol Collector Cut-off Current I CBO Emitter Cut-off Current I EBO DC Current Gain h FE Gain Bandwidth Product f Insertion Power Gain S Noise Figure NF Reverse Transfer Capacitance C re (2) Q2 ...

Page 4

TYPICAL CHARACTERISTICS (Unless otherwise specified, T TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Mounted on Glass Epoxy PCB 2 (1.08 cm 1.0 mm (t) ) 250 2 Elements in total 210 200 180 Q1 150 105 100 ...

Page 5

Q1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 Base to Emitter Voltage V BE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 V ...

Page 6

Q1 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 400 A 350 A 300 Collector to Emitter Voltage V 6 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 500 A 250 A 30 ...

Page 7

Q1 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 V 100 10 0 Collector Current I (mA CURRENT GAIN vs. COLLECTOR CURRENT 1 000 V 100 10 0 Collector Current I (mA ...

Page 8

Q1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current I (mA) C GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT ...

Page 9

Q1 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 25 MAG 21e 5 0 0.1 1 Frequency f (GHz) INSERTION POWER GAIN, ...

Page 10

Q1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 24 MSG MAG 21e Collector Current I C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 16 MSG MAG 12 ...

Page 11

Q1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 24 MSG MAG 21e GHz Collector Current I (mA) C INSERTION POWER GAIN, ...

Page 12

Q1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 24 MSG 21e Collector Current I C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 16 MSG MAG 12 2 ...

Page 13

Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ...

Page 14

Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ...

Page 15

Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ...

Page 16

S-PARAMETERS mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.952 7.1 0.2 0.943 14.4 0.3 0.931 21.5 0.4 0.905 28.3 0.5 0.880 35.8 0.6 0.845 ...

Page 17

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.783 18.8 0.2 0.747 34.7 0.3 0.673 49.8 0.4 0.607 62.9 0.5 0.537 76.1 0.6 0.481 87.4 0.7 ...

Page 18

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.648 29.0 0.2 0.574 52.1 0.3 0.489 71.7 0.4 0.426 88.0 0.5 0.373 103.3 0.6 0.340 116.3 0.7 ...

Page 19

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.965 7.3 0.2 0.946 13.5 0.3 0.930 19.9 0.4 0.911 26.3 0.5 0.887 33.4 0.6 0.855 40.2 0.7 ...

Page 20

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.812 16.7 0.2 0.760 31.0 0.3 0.690 44.5 0.4 0.623 56.5 0.5 0.554 68.7 0.6 0.494 79.0 0.7 ...

Page 21

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.670 23.0 0.2 0.595 45.4 0.3 0.510 62.4 0.4 0.439 77.2 0.5 0.380 91.1 0.6 0.336 103.6 0.7 ...

Page 22

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.951 6.6 0.2 0.948 13.1 0.3 0.935 19.4 0.4 0.911 25.8 0.5 0.890 32.5 0.6 0.858 39.1 0.7 ...

Page 23

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.800 14.8 0.2 0.762 29.9 0.3 0.699 43.3 0.4 0.632 54.5 0.5 0.560 66.3 0.6 0.500 76.5 0.7 ...

Page 24

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.676 22.3 0.2 0.612 42.9 0.3 0.526 59.1 0.4 0.451 73.0 0.5 0.386 86.6 0.6 0.340 98.4 0.7 ...

Page 25

S-PARAMETERS mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.939 6.2 0.2 0.938 13.5 0.3 0.923 20.1 0.4 0.910 27.1 0.5 0.885 34.2 0.6 0.861 ...

Page 26

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.766 11.3 0.2 0.736 24.0 0.3 0.681 35.5 0.4 0.635 46.8 0.5 0.574 56.6 0.6 0.529 65.6 0.7 ...

Page 27

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.611 16.9 0.2 0.565 32.0 0.3 0.497 45.9 0.4 0.445 58.7 0.5 0.388 69.6 0.6 0.345 79.0 0.7 ...

Page 28

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.952 6.1 0.2 0.939 12.5 0.3 0.924 19.1 0.4 0.913 25.7 0.5 0.891 32.4 0.6 0.870 38.9 0.7 ...

Page 29

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.779 10.5 0.2 0.746 22.0 0.3 0.701 31.9 0.4 0.653 41.9 0.5 0.595 51.1 0.6 0.545 59.1 0.7 ...

Page 30

mA Frequency S 11 (GHz) MAG. ANG. (deg.) 0.1 0.637 14.8 0.2 0.587 27.8 0.3 0.526 39.9 0.4 0.471 50.7 0.5 0.408 59.7 0.6 0.365 68.0 0.7 ...

Page 31

PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (UNIT: mm) 1.0±0.05 +0.07 0.8 –0. PIN CONNECTIONS Data Sheet PU10067EJ01V0DS PA860TD (Top View Collector (Q1) 2. Emitter (Q1) 3. ...

Page 32

The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

Page 33

Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 Korea Branch Office TEL: ...

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