upa809t California Eastern Laboratories, upa809t Datasheet - Page 2

• Manufacturer Part Number: upa809t
• Description: Npn Silicon High Frequency Transistor
• Manufacturer: California Eastern Laboratories

TYPICAL PERFORMANCE CURVES
UPA809T
200
100
30
20
10
10
5
0
0
0
COLLECTOR TO EMITTER VOLTAGE
V
Collector to Emitter Voltage, V
GAIN BANDWIDTH PRODUCT vs.
TOTAL POWER DISSIPATION vs.
f= 2 GHz
CE
Ambient Temperature, T
= 1 V
1
COLLECTOR CURRENT vs.
1
AMBIENT TEMPERATURE
COLLECTOR CURRENT
Collector Current, I
2
50
2
3
3
4
100
C
(mA)
5
A
l
5
B
( C)
= 20 A
200 A
180 A
160 A
140 A
120 A
100 A
CE
80 A
60 A
40 A
Free Air
7
6
(V)
150
10
(T
A
= 25 C)
0.05
0.02
0.01
100
200
100
0.5
0.2
0.1
10
50
20
10
5
2
1
0
5
0
0
0.1 0.2
V
V
CE
V
CE
f= 2 GHz
CE
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
= 1 V
INSERTION POWER GAIN vs.
= 1 V
= 1 V
1
COLLECTOR CURRENT vs.
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
0.5
1
2
2
0.5
3
5
10
C
C
(mA)
(mA)
5
20
BE
(V)
7
50
100
10
1