SST39VF160-70-4C-UK SST [Silicon Storage Technology, Inc], SST39VF160-70-4C-UK Datasheet - Page 9

• Manufacturer Part Number: SST39VF160-70-4C-UK
• Description: 16 Megabit (1M x 16-Bit) Multi-Purpose Flash
• Manufacturer: SST [Silicon Storage Technology, Inc]

16 Megabit Multi-Purpose Flash
SST39VF160Q / SST39VF160
Advance Information
T
T
Note:
T
Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
© 1998 Silicon Storage Technology, Inc.
T
Symbol
N
T
V
V
I
LTH
ABLE
ABLE
ABLE
Symbol Parameter
I
I
I
I
I
V
V
V
V
V
V
V
I
Parameter
C
C
DR
ABLE
ZAP_HBM
ZAP_MM
END
DD
SB
ALP
LI
LO
H
Symbol
T
T
IL
ILC
IH
IHC
OL
OH
H
I/O
IN
PU-READ
PU-WRITE
(1)
(1)
(1) This
(1)
(1)
(1)
8: DC O
11: R
10: C
9: R
(1)
(1)
parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ECOMMENDED
(1)
ELIABILITY
APACITANCE
Power Supply Current
Read
Program and Erase
Standby V
Auto Low Power Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS) V
Output Low Voltage
Output High Voltage
Supervoltage for A
Supervoltage Current
(1)
for A
PERATING
Parameter
Endurance
Data Retention
ESD Susceptibility
Human Body Model
ESD Susceptibility
Machine Model
Latch Up
9
pin
I/O Pin Capacitance
Input Capacitance
Description
Parameter
Power-up to Read Operation
Power-up to Program/Erase
Operation
C
DD
HARACTERISTICS
(Ta = 25 °C, f=1 Mhz, other pins open)
C
S
HARACTERISTICS
YSTEM
Current
9
P
pin
OWER
Minimum Specification
-
UP
V
DD
T
IMINGS
DD
11.4
100 + I
Min
0.3
2.0
2.4
= 2.7-3.6V
10,000
-0.3
1000
100
200
Test Condition
V
V
DD
Limits
I/O
IN
Max
12.6
200
0.8
0.4
20
25
10
10
1
1
= 0V
AND
= 0V
9
V
Units
DDQ
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
Minimum
Cycles
Years
Units
Volts
Volts
= V
mA
100
100
DD OR
CE#=OE#=V
Address input = V
CE#=WE#=V
CE#=V
CE#=V
V
V
V
V
V
V
I
I
CE# = OE# =V
CE# = OE# = V
Test Conditions
Maximum (TSOP)
OL
OH
IN
OUT
DD
DD
DD
DD
= 100 µA, V
=GND to V
= -100 µA, V
4.5V - 5.5V
= V
= V
= V
= V
Test Method
MIL-STD-883, Method 1033
JEDEC Standard A103
JEDEC Standard A114
JEDEC Standard A115
JEDEC Standard 78
=GND to V
12 pF
IHC
IHC
6 pF
DD
DD
DD
DD
, V
, V
Max.
Max.
Max.
Max.
DD
DD
IL,
IL,
DD
WE#=V
IL
DD
IL
OE#=V
= V
= V
, WE# = V
DD
DD
, WE# = V
, V
IL
= V
, V
/V
= V
DD
DD
DD
IH
DD
DD
Max.
Max.
IH
Maximum (TFBGA)
DD
= V
, at f=1/T
IH,
Units
, all I/Os open,
= V
Min.
Min.
V
µs
µs
DD
IH
IH
DD
DD
, A
Max.
=V
12pF
6pF
Max.
9
RC
DD
= V
329 PGM T12.2
329 PGM T10.2
329 PGM T11.1
Min.
329 PGM T9.8
Max.
329-09 11/98
H
Max.
5
6
7
8
13
14
15
16
1
2
3
4
9
10
11
12