at-32032 Avago Technologies, at-32032 Datasheet

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at-32032

Manufacturer Part Number
at-32032
Description
Low Current, High Performance Npn Silicon Bipolar Transistor
Manufacturer
Avago Technologies
Datasheet

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AT-32032
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32032 is a high performance NPN bipolar
transistor that has been optimized for maximum f
low voltage operation, making it ideal for use in battery
powered applications in cellular/PCS and other wireless
markets. The AT-32032 uses the miniature 3 lead SOT-
323 (SC-70) plastic package.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems.
Typical amplifier design at 900 MHz yields 1 dB noise
figures with 15 dB associated gain at 2.7 V and 5 mA bias
condition, with noise performance being relatively
insensitive to input match. High gain capability at 1 V
and 1 mA makes this device a good fit for 900 MHz pager
applications. Moreover, voltage breakdown is high
enough for use at 5 V.
The AT-32032 belongs to Avago’s AT-3XXXX series
bipolar transistors. It exhibits excellent device
uniformity, performance and reliability as a result of
ion-implantation, self-alignment techniques, and gold
metalization in the fabrication process.
t
at
Features
• High Performance Bipolar Transistor Optimized for Low
• Performance at 2.7 V, 5 mA:
• Characterized for End-Of-Life Battery Use (2.7 V)
• Miniature 3-lead SOT-323 (SC-70) Plastic Package
• Lead-free Option Available
Applications
• LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
• LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
• Power Amplifier and Oscillator for RF-ID Tag
• LNA and Gain Amplifier for GPS
• LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
Current, Low Voltage Applications at 900 MHz, 1.8 GHz,
and 2.4 GHz
900 MHz: 1 dB NF, 15 dB G
1800 MHz: 1.3 dB NF, 11 dB G
2400 MHz: 1.4 dB NF, 7.5 dB G
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
BASE
COLLECTOR
32
EMITTER
A
A
A

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at-32032 Summary of contents

Page 1

... The AT-32032 uses the miniature 3 lead SOT- 323 (SC-70) plastic package. Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. ...

Page 2

... Collector Cutoff Current CBO Emitter Cutoff Current EBO AT-32032 Characterization Information, T Symbol Parameters and Test Conditions P Power Gain Compression (opt tuning) 1dB Gain Gain Compression (opt tuning) 1dB ...

Page 3

... Figure 7. AT-32032 P vs. Collector 1 dB Current and Voltage (valid up to 2.4 GHz). 2.5 2.0 1.5 1.0 0 1.0 2.0 3.0 4.0 FREQUENCY (GHz) Figure 2. AT-32032 Typical Noise Figure vs. Frequency and Current at 2.7 V. 20.0 15.0 10.0 5 1.0 2.0 3.0 4.0 FREQUENCY (GHz) Figure 5. AT-32032 Associated Gain vs. Frequency and Current at 2 ...

Page 4

... AT-32032 Typical Noise Parameters Ω, V Common Emitter Freq. F min GHz dB Mag 0.9 1.1 0.48 1.8 1.3 0.51 2.0 1.4 0.52 2.5 1.6 0.54 3.0 1.8 0.57 3.5 2.0 0.61 4.0 2.2 0.65 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 5

... AT-32032 Typical Noise Parameters Ω, V Common Emitter Freq. F min GHz dB Mag 0.9 0.9 0.38 1.8 1.2 0.41 2.0 1.2 0.42 2.5 1.4 0.44 3.0 1.6 0.47 3.5 1.8 0.52 4.0 2.1 0.57 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 6

... AT-32032 Typical Noise Parameters Ω, V Common Emitter Freq. F min GHz dB Mag 0.9 0.9 0.23 1.8 1.2 0.295 2.0 1.2 0.31 2.5 1.3 0.35 3.0 1.5 0.41 3.5 1.7 0.47 4.0 1.9 0.54 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 7

... AT-32032 Typical Noise Parameters Ω, V Common Emitter Freq. F min GHz dB Mag 0.9 1.1 0.15 1.8 1.3 0.23 2.0 1.4 0.26 2.5 1.5 0.32 3.0 1.7 0.38 3.5 1.9 0.45 4.0 2.0 0.52 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 8

... AT-32032 Typical Noise Parameters Ω Common Emitter Freq. F min GHz dB Mag 0.9 1.0 0.48 1.8 1.2 0.445 2.0 1.3 0.44 2.5 1.5 0.43 3.0 1.7 0.47 3.5 1.9 0.53 4.0 2.1 0.58 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 9

... AT-32032 Typical Noise Parameters Ω, V Common Emitter Freq. F min GHz dB Mag 0.9 1.0 0.38 1.8 1.2 0.335 2.0 1.3 0.33 2.5 1.4 0.35 3.0 1.6 0.40 3.5 1.8 0.47 4.0 2.0 0.54 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 10

... AT-32032 Typical Noise Parameters Ω, V Common Emitter Freq. F min GHz dB Mag 0.9 1.1 0.29 1.8 1.3 0.25 2.0 1.4 0.26 2.5 1.5 0.31 3.0 1.7 0.37 3.5 1.9 0.45 4.0 2.1 0.52 gmax = maximum available gain (MAG > 1 gmax = maximum stable gain (MSG < 1 ...

Page 11

... AT-32032 Application Information The AT-32032 is described in a low noise amplifier for use in the 800 to 900 MHz frequency range. The amplifier is designed for use with .032 inch thickness FR-4 printed circuit board material. 900 MHz LNA Design The amplifier is designed for 2.7 volts and ...

Page 12

... The second method would be to optimize the output match for power as opposed to matching for lowest VSWR. Using the AT-32032 at Other Frequencies The demo board and design techniques presented here can be used to build low noise amplifiers for other frequencies in the VHF through 1 ...

Page 13

... Ordering Information Part Numbers No. of Devices AT-32032-BLK 100 AT-32032-BLKG 100 AT-32032-TR1 3000 AT-32032-TR1G 3000 AT-32032-TR2 10000 AT-32032-TR2G 10000 Note: Order part number with a “G” suffix if lead-free option is desired. Package Dimensions SOT-323 Plastic Package XXX Notes: XXX-package marking ...

Page 14

... CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved. ...

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