blv830 Shanghai Belling Co, Ltd, blv830 Datasheet
blv830
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blv830 Summary of contents
Page 1
... Thermal Resistance, Junction to case th j-c R Thermal Resistance, Junction to Ambient th j-a http://www.belling.com.cn N-channel Enhancement Mode Power MOSFET . =25 C unless otherwise noted ) C Parameter =100 C C Parameter Max. Max. Page 1/6 BLV830 BV 500V DSS 1.5Ω Ω Ω Ω R DS(ON) I 4.5A D Value Units 500 4 0.59 W/℃ ...
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... ± 30V GS V =400V DD I =4. =10V GS note3 V =250V DD I =4. =25 G note3 V =25V 1MHz Test Conditions V =0V, I =4. =0V, I =4. /dt = 100A/ Page 2/6 BLV830 Min. Typ. Max. 500 - - - 100 - - ±100 - 31 47.5 ...
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... Typical Characteristics Fig 1. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature http://www.belling.com.cn N-channel Enhancement Mode Power MOSFET Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Junction Temperature Page 3/6 BLV830 2008.08.08 ...
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... Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 7. Gate Charge Characteristics http://www.belling.com.cn N-channel Enhancement Mode Power MOSFET Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 8. Capacitance Characteristics Page 4/6 BLV830 2008.08.08 ...
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... Typical Characteristics （ （ （ （ continued） ） ） ） Fig 10. Transient Thermal Response Curve http://www.belling.com.cn N-channel Enhancement Mode Power MOSFET Fig 9. Maximum Safe Operating Area Page 5/6 BLV830 2008.08.08 ...
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... Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 13. Switching Time Circuit Fig 15. Unclamped Inductive Switching Test Circuit http://www.belling.com.cn N-channel Enhancement Mode Power MOSFET Fig 12. Gate Charge Waveform Fig 14. Switching Time Waveform Fig 16. Unclamped Inductive Switching Waveforms Page 6/6 BLV830 2008.08.08 ...