TC4429 TELCOM [TelCom Semiconductor, Inc], TC4429 Datasheet - Page 2

• Manufacturer Part Number: TC4429
• Description: 6A HIGH-SPEED MOSFET DRIVERS
• Manufacturer: TELCOM [TelCom Semiconductor, Inc]

ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
V
V
I
Output
V
V
R
R
I
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
V
4-226
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > V
Input Current (V
Power Dissipation, T
Package Power Dissipation (T
Derating Factors (To Ambient)
Thermal Impedances (To Case)
TC4420
TC4429
IN
PK
REV
R
F
D1
D2
S
IH
IL
IN
OH
OL
DD
O
O
(Max)
PDIP ...............................................................730mW
SOIC ...............................................................470mW
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
5-Pin TO-220 (With Heat Sink) .........................1.60W
PDIP ............................................................. 8mW/ C
SOIC ............................................................. 4mW/ C
CerDIP ....................................................... 6.4mW/ C
5-Pin TO-220 .............................................. 12mW/ C
5-Pin TO-220 R
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Operating Input Voltage
> V
A
J-C
Parameter
DD
........................................ 10 C/W
) .........................................50mA
70 C
A
70 C)
T
A
Test Conditions
0V
See Figure 1
See Figure 1
I
I
V
Duty Cycle
t
Figure 1, C
Figure 1, C
Figure 1
Figure 1
V
V
= +25 C with 4.5V
OUT
OUT
DD
IN
IN
300 s
= 3V
= 0V
= 18V (See Figure 5)
= 10 mA, V
= 10 mA, V
V
IN
DD
V
L
L
DD
= 2500 pF
= 2500 pF
2%
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Storage Temperature Range ................ – 65 C to +150 C
Operating Temperature (Chip) .............................. +150 C
Operating Temperature Range (Ambient)
Lead Temperature (Soldering, 10 sec) ................. +300 C
DD
DD
= 18V
= 18V
C Version ............................................... 0 C to +70 C
I Version ........................................... – 25 C to +85 C
E Version .......................................... – 40 C to +85 C
M Version ....................................... – 55 C to +125 C
6A HIGH-SPEED MOSFET DRIVERS
V
DD
18V, unless otherwise specified.
V
DD
TELCOM SEMICONDUCTOR, INC.
– 10
Min
2.4
1.5
4.5
– 0.025
–5
—
—
—
—
—
—
—
—
—
—
—
Typ
0.45
1.8
1.3
2.1
1.5
25
25
55
55
55
—
—
—
—
—
—
6
V
0.025
DD
Max
150
0.8
2.8
2.5
1.5
10
35
35
75
75
18
—
—
—
—
+0.3
V
V
A
nsec
nsec
mA
Unit
V
V
V
A
nsec
nsec
V
A
A