2SK1254S HITACHI [Hitachi Semiconductor], 2SK1254S Datasheet - Page 6

• Manufacturer Part Number: 2SK1254S
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SK1254(L), 2SK1254(S)
6
500
200
100
100
50
20
10
80
60
40
20
5
0
0.1
di/dt = 50 A/ s, Ta = 25°C
V
Pulse Test
GS
V
0.2
Reverse Drain Current I
DS
Dynamic Input Characteristics
Body to Drain Diode Reverse
= 0
8
Gate Charge Qg (nc)
V
V
50 V
25 V
DD
DD
0.5
Recovery Time
80 V
= 25 V
= 80 V
50 V
16
1.0
V
GS
24
2
DR
I
D
32
= 3 A
(A)
5
40
10
20
16
12
8
4
0
1,000
500
200
100
100
50
20
10
10
5
1
1.0
0
V
f = 1 MHz
Drain to Source Voltage V
GS
0.2
vs. Drain to Source Voltage
10
= 0
Switching Characteristics
t
d (off)
Drain Current I
Typical Capacitance
0.5
t
t
d (on)
r
t
20
f
V
PW = 2 s, duty
GS
1.0
= 10 V V
30
D
2
(A)
Ciss
Coss
Crss
DD
DS
40
<
= 30 V
•
5
(V)
•
1 %
10
50