1MB03D-120 FUJI [Fuji Electric], 1MB03D-120 Datasheet
1MB03D-120
Manufacturer Part Number
1MB03D-120
Description
Fuji Discrete Package IGBT
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.1MB03D-120.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1MB03D-120
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Fuji Discrete Package IGBT
n n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance
n n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n n Maximum Ratings and Characteristics
•
•
•
Thermal Resistance
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector Current
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Temperature
Storage Temperature
Mounting Screw Torque
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Switching Time
Diode Forward On-Voltage
Reverse Recovery Time
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Items
Items
Items
DC
DC
1ms T
Turn-on Time
Turn-off Time
Turn-on Time
Turn-off Time
T
T
c
c
c
= 25°C
=100°C
= 25°C
( at T
( T
j
=25°C )
c
=25°C
V
V
I
I
I
P
P
T
T
)
Symbols
C 25
C 100
C PULSE
Symbols
I
I
V
V
C
C
C
t
t
t
t
t
t
t
t
V
t
Symbols
CES
GES
C
C
j
stg
CES
GES
ON
r
OFF
f
ON
r
OFF
f
rr
GE(th)
CE(sat)
ies
oes
res
F
R
R
th(j-c)
th(j-c)
-40
Ratings
+150
1200
20
15
70
40
50
V
V
V
V
V
V
f=1MHz
V
I
V
R
V
I
V
R
I
I
IGBT
Diode
2.5
5
C
C
F
F
+150
GE
CE
GE
GE
GE
CE
CC
GE
CC
GE
=2.5A V
=2.5A
=2.5A
G
=2.5A
G
=430
=43
=0V V
=0V V
=20V I
=15V I
=0V
=10V
=600V
= 15V
=600V
=+15V
Test Conditions
Test Conditions
, V
GE
GE
GE
CE
Units
C
C
Nm
°C
°C
W
W
=2.5mA
=2.5A
=-10V, di/dt=100A/µs
=0V
=1200V
= 20V
V
V
A
n n Outline Drawing
n n Equivalent Circuit
Min.
Min.
5.5
Typ.
0.16
0.11
0.30
Typ.
400
70
20
1.78
3.12
Max.
350
Max.
1.0
8.5
3.5
1.2
0.6
1.5
0.5
0.5
3.0
20
Units
Units
°C/W
mA
µA
pF
ns
µs
µs
V
V
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1MB03D-120 Summary of contents
Page 1
Fuji Discrete Package IGBT n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • ...
Page 2
Collector Current vs. Collector-Emitter Voltage ° Collector-Emitter Voltage : ...
Page 3
Switching Time vs =600V, I =2.5A ± off Gate Resistance : ...
Page 4
Reverse Biased Safe Operating Area + < < ° > ...
Page 5
Switching losses ( Test Circuit Specification is subject to change without notice vs off C [A] Switching waveforms May 97 ...