2SJ245L HITACHI [Hitachi Semiconductor], 2SJ245L Datasheet - Page 5

• Manufacturer Part Number: 2SJ245L
• Description: SILICON P-CHANNEL MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

–100
–20
–40
–60
–80
1000
500
200
100
0
50
20
10
Body to Drain Diode Reverse Recovery Time
0
–0.1 –0.2
V
DS
I = –5 A
Dynamic Input Characteristics
Reverse Drain Current
D
8
Gate Charge
V
–0.5
DD
16
= –10 V
–25 V
–50 V
–1
V
V
24
GS
Qg (nc)
DD
di/dt = 50 A/µs
V
Ta = 25°C
Pulse test
GS
–2
= –50 V
–25 V
–10 V
= 0
I
32
DR
–5
(A)
40
–10
0
–4
–8
–12
–16
–20
2000
1000
500
200
100
500
200
100
50
20
50
20
10
–0.1 –0.2
5
0
V
V
PW = 2 s
duty 1%
V
f = 1 MHz
Drain to Source Voltage V
DD
GS
GS
= –30 V
–10
= –10 V
= 0
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
–0.5
–20
t
–1
t
f
r
t (off)
–30
d
t (on)
d
2SJ245 L , 2SJ245 S
I
–2
D
Ciss
Coss
Crss
(A)
–40
DS
–5
(V)
–50
–10