2SJ610_09 TOSHIBA [Toshiba Semiconductor], 2SJ610_09 Datasheet - Page 5

• Manufacturer Part Number: 2SJ610_09
• Description: TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

−100
−0.5
−0.3
−0.1
−0.0
−0.0
−0.0
−50
−30
−10
−5
−3
−1
1
Curves must be derated linearly
with increase in temperature.
* Single nonrepetitive pulse
I D max (pulsed) *
Tc = 25°C
3
Drain-source voltage V
0.005
0.003
0.001
5
0.05
0.03
0.01
0.5
0.3
0.1
Safe operating area
10 μ
DC
3
1
10
0.01
0.2
0.1
0.02
Duty = 0.5
0.05
1 ms *
30 50
100 μ
V DSS max
Single pulse
100
DS
100 μs *
(V)
300 500
1 m
1000
Pulse width t
10 m
r
th
– t
5
w
w
R
V
100 m
DD
G
(S)
= 25 Ω
= −50 V, L = 75 mH
200
160
120
80
40
−15 V
0
25
15 V
Test circuit
1
Channel temperature (initial) T
P DM
50
Duty = t/T
R th (ch-c) = 6.25°C/W
t
10
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
100
1
2
VDSS
I
⋅
AR
L
⋅
2 I
ch
Waveform
⋅
125
⎛
⎜
⎜
⎝
(°C)
B VDSS
V
DS
2009-07-13
B VDSS
2SJ610
150
−
V DD
⎞
⎟
⎟
⎠