2sb956 Panasonic Corporation of North America, 2sb956 Datasheet
2sb956
Manufacturer Part Number
2sb956
Description
Silicon Pnp Epitaxial Planer Type For Low-frequency Power Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SB956.pdf
(2 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
2SB956
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2sb956-R
Manufacturer:
Panasonic
Quantity:
45 000
Company:
Part Number:
2sb956-R
Manufacturer:
PANASONIC
Quantity:
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Part Number:
2sb956-R
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE1
Features
Large collector power dissipation P
Low collector to emitter saturation voltage V
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
130 ~ 210
Symbol
V
V
V
I
I
P
T
T
HR
CP
C
R
C
j
stg
CBO
CEO
EBO
*
I
V
V
h
h
V
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
BE(sat)
ob
*1
(Ta=25˚C)
C
180 ~ 280
.
–55 ~ +150
2
Ratings
HS
S
or more, and the board
–20
–20
150
–5
–2
–1
1
V
I
I
V
V
I
I
V
V
CE(sat)
C
E
C
C
CB
CE
CE
CB
CB
= –1mA, I
= –10 A, I
= –1A, I
= –500mA, I
= –2V, I
= –2V, I
= –10V, I
= –6V, I
= –6V, I
.
B
Unit
Conditions
C
C
W
˚C
˚C
B
= –50mA
E
E
V
V
V
A
A
C
E
= –500mA
= –1.5A
= 50mA, f = 200MHz
= 0, f = 1MHz
= 0
= 0
B
= 0
= –50mA
*2
*2
*2
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
–20
130
–5
50
3
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
200
H
typ
40
1
*2
Pulse measurement
– 0.5
max
–1.2
280
–1
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
A
1
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2sb956 Summary of contents
Page 1
... Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Features Large collector power dissipation P Low collector to emitter saturation voltage V Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing ...
Page 2
... I C t=1s – 0.3 – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 ( V ) Collector to emitter voltage V CE 2SB956 V — I CE(sat) C – = –3 Ta=75˚C –1 25˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – ...