blv297 Shanghai Belling Co, Ltd, blv297 Datasheet

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blv297

Manufacturer Part Number

blv297

Description

N-channel Enhancement Mode Power Mosfet

Manufacturer

Shanghai Belling Co, Ltd

Datasheet

1.BLV297.pdf (1 pages)

Current page: 1 of 1
Download datasheet (81Kb)

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency logic level circuit

Electrical Characteristics

BV

R

V

I

I

V

o Die size with scribe line

o Die Thickness

o Metallization

o Bonding Pad Size

o Passivation

http://www.belling.com.cn

DSS

GSS

Symbol

GS(th)

SD

DS(ON)

DSS

Scribe line

Ease of Paralleling

Fast Switching

Simple Drive Requirements

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance V

Gate Threshold Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Forward On Voltage

Top

Gate

Bottom

Source

Parameter

(

T

C

=25C unless otherwise noted )

140µm X 102µm

Ti / Ni / Ag

1570µm X 1570µm

300± 20um

Al

80um

540µm X 540µm

Total 1 Pages

.

- 1 -

V

V

V

V

V

GS

GS

DS

DS

GS

GS

Test Conditions

N-channel Enhancement Mode Power MOSFET

=0V, I

=10V, I

=V

=200V, V

= 20V

=0V, I

GS

, I

D

S

D

=250uA

=0.65A

D

=400uA

=0.65A

GS

=0V

Min.

200

0.5

-

-

-

-

R

BV

I

D

DS(ON)

Typ.

DSS

-

-

-

-

-

-

BLV297

Max.

1.2

2.0

1.8

0.1

10

2/27/2008

-

200V

2.0Ω Ω Ω Ω

0.65A

Units

uA

nA

Ω

V

V

V

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