MRF282S MOTOROLA [Motorola, Inc], MRF282S Datasheet - Page 7

• Manufacturer Part Number: MRF282S
• Description: LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
• Manufacturer: MOTOROLA [Motorola, Inc]

– 20
– 30
– 40
–10
MOTOROLA RF DEVICE DATA
1.5
40
20
60
50
30
10
.5
2
1
0
0
10
0
Figure 12. Class A Third Order Intercept Point
Figure 10. Class A DC Safe Operating Area
FUNDAMENTAL
4
T J = 175 C
3rd Order
V DD , DRAIN SUPPLY VOLTAGE (Vdc)
8
P in , INPUT POWER (dBm)
20
12
16
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
T flange = 100 C
TOI POINT
30
0
20
This graph displays calculated MTBF in hours x ampere 2 drain cur-
ent. Life tests at elevated temperature have correlated to better than
factor by I D 2 for MTBF in a particular application.
V DD = 26 Vdc
I D = 600 mAdc
f 1 = 2000.0 MHz
f 2 = 2000.1 MHz
10% of the theoretical prediction for metal failure. Divide MTBF
T flange = 75 C
Figure 14. MTBF Factor versus
24
50
Junction Temperature
T J , JUNCTION TEMPERATURE ( C)
28
40
100
100
1.0
0.1
10
14
13
12
10
11
1930
0
Figure 13. Performance in Broadband Circuit
P out = 10 W (PEP)
V DD = 26 Vdc
I DQ = 75 mA
1940
150
4
Figure 11. Capacitance versus
V DS , DRAIN SOURCE VOLTAGE (VOLTS)
1950
8
Drain Source Voltage
200
f, FREQUENCY MHz)
1960
C oss
C iss
C rss
12
250
1970
16
1980
20
MRF282S MRF282Z
1990
24
VSWR
G ps
2000
28
39
38
37
36
35
1.6:1
1.4:1
1.2:1
7