IRHNA67164 IRF [International Rectifier], IRHNA67164 Datasheet
IRHNA67164
Related parts for IRHNA67164
IRHNA67164 Summary of contents
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... Low R n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight PD-96959A IRHNA67164 150V, N-CHANNEL TECHNOLOGY SMD-2 DS(on) Pre-Irradiation Units 56 224 250 W 2.0 W/°C ±20 V 283 mJ 56 ...
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... IRHNA67164 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...
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... On-State Resistance (SMD-2) V Diode Forward Voltage SD Part numbers IRHNA67164 and IRHNA63164 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables. Tables for Single Event Effect Safe Operating Area ...
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... IRHNA67164 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 100 6.0V BOTTOM 5.0V 10 5.0V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 150°C 100 25° 50V 60µs PULSE WIDTH 1 5 5.5 6 6 Gate-to-Source Voltage (V) Fig 3 ...
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... Fig 6. Typical Gate Charge Vs. 1000 100 25° 150° Single Pulse 0.1 1.5 2.0 1.0 Fig 8. Maximum Safe Operating Area IRHNA67164 120V 56A 75V 30V FOR TEST CIRCUIT SEE FIGURE 120 160 200 240 Q G, Total Gate Charge (nC) ...
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... IRHNA67164 80 LIMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° ...
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... 200 100 Starting Junction Temperature (°C) (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit IRHNA67164 I D TOP 56A 35.4A BOTTOM 25A 50 75 100 125 Vs. Drain Current Current Regulator 50KΩ .2µF .3µ ...
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... IRHNA67164 Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 50V, starting 25°C, L= 0.18mH Peak 56A 12V Â ≤ 56A, di/dt ≤ 860/µ ≤ 150V ≤ 150°C Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St ...