RJK0301DPB-00-J0 RENESAS [Renesas Technology Corp], RJK0301DPB-00-J0 Datasheet - Page 4

• Manufacturer Part Number: RJK0301DPB-00-J0
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

RJK0301DPB
Rev.9.00 Apr 19, 2006 page 4 of 6
100
Static Drain to Source on State Resistance
50
40
30
20
10
10
80
60
40
20
0
0
8
6
4
2
0
–25
25
0
Pulse Test
I
D
Maximum Avalanche Energy vs.
Channel Temperature Tch (°C)
V
V
V
Channel Temperature Derating
Case Temperature
Dynamic Input Characteristics
= 60 A
DD
GS
DS
0
Gate Charge
40
50
= 25 V
= 4.5 V
10 V
10 V
25
vs. Temperature
I
D
80
75
50
= 5 A, 10 A, 20 A
V
DD
5 A, 10 A, 20 A
75
100
120
= 25 V
I
V
duty < 0.1 %
Rg ≥ 50 Ω
Qg (nc)
AP
10 V
DD
100 125 150
V
Tc
= 30 A
GS
= 15 V
160
125
(
°
C)
200
150
20
16
12
8
4
0
10000
3000
1000
300
100
100
30
10
80
60
40
20
0
0
Drain to Source Voltage V
Source to Drain Voltage V
V
f = 1 MHz
GS
Reverse Drain Current vs.
= 0
0.4
Drain to Source Voltage
Typical Capacitance vs.
Source to Drain Voltage
10 V
5 V
10
0.8
V
GS
1.2
= 0, –5V
20
Pulse Test
1.6
DS
SD
Ciss
Coss
Crss
(V)
(V)
30
2.0