PSMG60/08 POWERSEM [Powersem GmbH], PSMG60/08 Datasheet

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PSMG60/08

Manufacturer Part Number
PSMG60/08
Description
MOSFET Module
Manufacturer
POWERSEM [Powersem GmbH]
Datasheet
Preliminary Data Sheet
MOSFET
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
V
M
a
Weight
Symbol
V
V
I
I
R
ATTENTION: All given data are derived from
similar modules or estimated from chip data.
D25
DM
AR
GSS
DSS
MOSFET Module
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
stg
DSS
DGR
GS
GSM
AR
AS
D
J
JM
ISOL
ISOL
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
continuous
transient
T
T
T
T
I
T
T
Mounting torque
max. allowed acceleration
Test Conditions
V
V
V
V
V
V
V
V
pulse test, t 300 µs,
duty cycle d
S
50/60 Hz, RMS
I
J
ISOL
(data related to single chip)
J
J
Case
Case
C
C
Case
DSS
GS(th)
GS
GS
DS
DS
GS
GS
= 25 °C to 150 °C
= 25 °C to 150 °C, R
= 25 °C
= 25 °C
150 °C, R
I
= 0 V, I
= 0 V
= V
= V
= 0 V,
= 10 V, I
DM
temperature coefficient
= 25 °C
= 25 °C, pulse width limited by T
= 25 °C
temperature coefficient
, di/dt
1 mA
DS
DSS
,
, I
,
V
D
D
GS
2 %
G
= 3 mA
D
= 8 mA
100A/µs, V
= 2
T
T
= 0.5 . I
=
J
J
=
= 125 °C max.
20 V
25 °C max.
t = 1 min.
t = 1 s
D25
GS
(T
DD
J
= 1 M
(M4)
= 25 °C, unless otherwise specified)
V
min.
typ.
min.
max.
typ.
max.
max.
DSS
,
Characteristic Values
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
S
Maximum Ratings
PSMG 60/08
-55...+150
-55...+150
JM
G
-0.214
0.096
+150
1200
2500
3000
0.12
800
800
240
800
200
100
1.5
3.0
5.0
20
30
60
60
64
14
50
26
3
5
2
D
V/ns
lb.in.
m/s
%/K
%/K
mA
Nm
mJ
nA
µA
V~
V~
W
°C
°C
°C
V
V
V
V
A
A
A
V
V
V
J
g
2
Caution: These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
Features
Applications
Advantages
V
I
R
t
D25
rr
DSS
DS(on)
Package with DCB ceramic base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
Low R
Fast intrinsic Rectifier
UL registerd, E 148688
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
DS(on)
=
=
=
Typical picture; changes
of the pin configuration
is reserved.
HDMOS
ECO-PAC
0.12
800 V
250 ns
TM
60 A
process
TM
2

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PSMG60/08 Summary of contents

Page 1

MOSFET Module Preliminary Data Sheet MOSFET (data related to single chip) Symbol Test Conditions °C to 150 °C DSS °C to 150 °C, R DGR J V continuous GS V transient ...

Page 2

Symbol Test Conditions iss oss MHz rss d(on 0 DSS ...

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