PSMI40-06 POWERSEM [Powersem GmbH], PSMI40-06 Datasheet
PSMI40-06
Manufacturer Part Number
PSMI40-06
Description
CoolMOS Power MOSFET
Manufacturer
POWERSEM [Powersem GmbH]
Datasheet
1.PSMI40-06.pdf
(2 pages)
MOSFET
Symbol
V
V
I
I
dv/dt
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
R
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
D25
D90
DSS
GSS
d(on)
d(off)
f
r
DSS
GS
AS
AR
GSth
F
thJC
CoolMOS Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
Low R
Package with Electrically Isolated Base
DSon
g
gs
gd
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
DSon
, High V
Conditions
T
T
T
V
T
I
I
Conditions
V
V
V
V
(reverse conduction) I
per MOSFET
D
D
VJ
C
C
VJ
DS
GS
DS
DS
GS
= 10 A; L = 36 mH; T
= 20 A; L = 5 µH; T
= 25°C
= 90°C
= 25°C to 150°C
= 150°C
V
< V
= 10 V; I
= 20 V; I
= V
= ±20 V; V
V
I
D
GS
GS
= 25 A; R
= 10 V; V
DSS
DSS
= 10 V; V
; I
; V
DSS
F
D
D
GS
= I
= 3 mA;
DS
MOSFET
50A; di
= 0 V; T
G
D90
DS
= 0 V
DS
= 1.8
= 350 V; I
= 380 V;
T
F
C
VJ
F
C
VJ
= 20 A; V
/dt
= 25°C
= 25°C
= 25°C
= 125°C
D
(T
= 50 A
200A/µs
VJ
GS
= 25°C, unless otherwise specified)
= 0 V
2004 POWERSEM reserves the right to change limits, test conditions and dimensions
R18
P18
L9
L4
L6
PSMI 40/06
min.
3.5
Characteristic Values
Maximum Ratings
220
125
100
0.9
typ.
60
55
30
95
10
600
±20
1.8
38
25
K12
K13
6
1
max.
0.45 K/W
100
5.5
1.1
NTC
70 m
25
V/ns
mJ
nC
nC
nC
µA
µA
nA
n s
n s
n s
n s
V
V
A
A
V
V
J
1)
CoolMOS is a trademark of Infineon Technologies AG.
Features
Applications
Advantages
ECO-PAC 2 with DCB Base
- Electrical isolation towards the
- Low coupling capacitance to the heatsink
- High power dissipation
- High temperature cycling capability
- solderable pins for DCB mounting
fast CoolMOS power MOSFET - 2
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
- Low thermal resistance
Enhanced total power density
UL registered, E 148688
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
heatsink
for reduced EMI
of chip on DCB
inductive switching (UIS)
due to reduced chip thickness
I
V
R
D25
DSS
DSon
ECO-PAC
= 38 A
= 600 V
= 70 m
1 )
TM
nd
2
generation
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PSMI40-06 Summary of contents
Page 1
CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low R , High V MOSFET DSon DSS Package with Electrically Isolated Base Preliminary Data Sheet MOSFET Symbol Conditions 25°C to 150°C DSS ...
Page 2
Temperature Sensor NTC Symbol Conditions 25° 25/50 Module Symbol Conditions stg mA; 50/60 Hz ISOL ISOL M Mounting torque (M4 Max. allowable acceleration ...