MTB09N03H8 CYSTEKEC [Cystech Electonics Corp.], MTB09N03H8 Datasheet
MTB09N03H8
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MTB09N03H8 Summary of contents
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... N-Channel Logic Level Enhancement Mode Power MOSFET MTB09N03H8 Description The MTB09N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • ...
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... Static BV 30 DSS V 1.0 GS(th GSS - I DSS - D(ON DS(ON) - Dynamic Ciss - Coss - Crss - MTB09N03H8 CYStech Electronics Corp. (Ta=25°C) =25°C C =100°C C =53A, R =25Ω =25℃ =100℃ C =15V, L=0.1mH, V =10V, I =25A, Rated Typ. Max. Unit - - V 1.7 3 ...
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... Source-Drain Diode - trr - Qrr - Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB09N03H8 CYStech Electronics Corp. Typ. Max. Unit 4 ...
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... Characteristic Curves MTB09N03H8 CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 4/6 CYStek Product Specification ...
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... Characteristic Curves(Cont.) MTB09N03H8 CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : Page No. : 5/6 CYStek Product Specification ...
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... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB09N03H8 CYStech Electronics Corp. Device Name ...