MTB2P50ET4 ONSEMI [ON Semiconductor], MTB2P50ET4 Datasheet - Page 3

• Manufacturer Part Number: MTB2P50ET4
• Description: Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
• Manufacturer: ONSEMI [ON Semiconductor]

3.5
2.5
1.5
0.5
1.5
0.5
10
4
3
2
1
0
8
6
4
2
0
2
1
− 50
0
0
Figure 3. On−Resistance versus Drain Current
V
T
GS
Figure 5. On−Resistance Variation with
J
− 25
0.5
V
I
= 25°C
D
Figure 1. On−Region Characteristics
GS
4
= 10 V
= 1 A
V
= 10 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
T
0
J
, JUNCTION TEMPERATURE (°C)
8
I
D
, DRAIN CURRENT (AMPS)
and Temperature
1.5
25
Temperature
12
T
J
= 100°C
50
2
25°C
− 55°C
V
TYPICAL ELECTRICAL CHARACTERISTICS
16
GS
2.5
= 10 V
75
20
100
3
4 V
6 V
5 V
24
125
3.5
http://onsemi.com
8 V
7 V
MTB2P50E
150
28
4
3
1000
5.75
5.25
4.75
4.25
100
3.5
2.5
1.5
0.5
5.5
4.5
10
4
3
2
1
0
6
5
4
1
0
2
0
Figure 4. On−Resistance versus Drain Current
V
2.5
50
DS
V
0.5
T
GS
J
Figure 6. Drain−To−Source Leakage
≥ 10 V
Figure 2. Transfer Characteristics
= 25°C
= 0 V
V
V
100
DS
GS
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
Current versus Voltage
150 200
3.5
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
V
1.5
GS
4
= 10 V
T
100°C
25°C
250
4.5
J
2
= 125°C
15 V
T
J
300
= − 55°C
5
2.5
350
5.5
3
400
6
3.5
100°C
25°C
450
6.5
500
7
4