NTB52N10T4 ONSEMI [ON Semiconductor], NTB52N10T4 Datasheet - Page 2

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NTB52N10T4

Manufacturer Part Number
NTB52N10T4
Description
N-Channel Enhancement−Mode D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NTB52N10T4
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
V
(V
(V
(V
DS
GS
GS
GS
GS
GS
GS
= V
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS,
I
D
= 250 mAdc)
D
DS
DS
D
D
D
= 250 mAdc)
= 26 Adc)
= 26 Adc, T
= 52 Adc)
= 100 Vdc, T
= 100 Vdc, T
Characteristic
DS
GS
J
= 26 Vdc, I
= 125°C)
J
J
= ± 20 Vdc, V
(I
= 25°C)
= 125°C)
S
= 37 Adc, V
(T
(V
(V
(V
C
(I
(I
DS
S
S
= 25°C unless otherwise noted)
DD
DS
D
= 52 Adc, V
= 52 Adc, V
= 10 Adc)
= 25 Vdc, V
dI
= 80 Vdc, I
= 80 Vdc, I
DS
V
V
S
f = 1.0 MHz)
R
/dt = 100 A/ms)
GS
GS
GS
G
= 0 Vdc)
= 10 Vdc,
= 10 Vdc)
= 9.1 W)
= 0 Vdc, T
http://onsemi.com
GS
GS
D
D
GS
NTB52N10
= 52 Adc,
= 52 Adc,
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
J
= 125°C)
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
C
I
DS(on)
DS(on)
Q
GS(th)
C
C
Q
Q
V
g
d(on)
d(off)
Q
DSS
GSS
t
t
t
FS
oss
t
t
rss
SD
RR
iss
rr
tot
gs
gd
a
b
r
f
Min
100
2.0
−8.75
0.023
0.050
2250
2.92
1.25
1.06
0.95
0.66
Typ
160
620
135
100
148
106
31
15
95
74
72
13
37
42
0.030
0.060
± 100
3150
Max
1.45
860
265
180
150
190
135
5.0
4.0
1.5
50
25
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
W

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