mgf4951a Mitsumi Electronics, Corp., mgf4951a Datasheet
mgf4951a
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mgf4951a Summary of contents
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... June/2004 DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF4952A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz ...
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... June/2004 Fig.1 MITSUBISHI SEMICONDUCTOR <GaAs FET> SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) MITSUBISHI (2/5) MGF4951A/MGF4952A Unit : mm 1 Gate 2 Source 3 Drain June/2004 ...
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... June/2004 TYPICAL CHARACTERISTICS MITSUBISHI SEMICONDUCTOR <GaAs FET> SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) (Ta=25 C) MITSUBISHI (3/5) MGF4951A/MGF4952A June/2004 ...
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... C,VDS=2V,ID=10mA Angle (ohm) (dB) 49.7 0.21 0.21 0.12 0.31 0.04 0.45 0.03 0.52 0.06 0.66 Gate Source MITSUBISHI (4/5) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A S12 S22 Angle Magn. Angle 78.3 0.525 -13.5 72.5 0.513 -22.5 59.5 0.491 -37.6 51.1 0.458 -47.5 44.7 0.449 -54.6 40.1 0.444 -58.7 36.6 0.439 -61.2 27.8 0.440 -68.2 24.0 0.444 -70.2 21.3 0.442 -72.3 15.6 0.418 -76 ...
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... The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI SEMICONDUCTOR <GaAs FET> SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) MITSUBISHI (5/5) MGF4951A/MGF4952A June/2004 ...