BCP29 SIEMENS [Siemens Semiconductor Group], BCP29 Datasheet - Page 2

• Manufacturer Part Number: BCP29
• Description: NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter saturation voltage
I
1)
Semiconductor Group
C
C
E
C
C
C
C
C
C
CB
CB
CB
CB
EB
= 1 mA, I
= 100 A, I
= 10 A, I
= 100 A, V
= 10 mA, V
= 100 mA, V
= 500 mA, V
= 100 mA, I
= 100 mA, I
Pulse test conditions: t 300 s, D = 2 %.
A
= 30 V, I
= 60 V, I
= 30 V, I
= 60 V, I
= 4 V, I
= 25 ˚C, unless otherwise specified.
C
B
C
E
E
E
E
= 0
= 0
B
= 0
= 0
= 0
= 0, T
= 0, T
CE
CE
B
B
CE
CE
= 0
= 0.1 mA
= 0.1 mA
1)
= 1 V
= 5 V
= 5 V
= 5 V
A
A
= 150 ˚C
= 150 ˚C
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
2
Symbol
V
V
V
I
I
h
V
V
CB0
EB0
FE
(BR)CE0
(BR)CB0
(BR)EB0
CEsat
BEsat
min.
30
60
40
80
10
–
–
–
–
–
4000
2000
10000
4000
20000
10000
4000
2000
–
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
max.
–
–
–
–
–
100
100
10
10
100
–
–
–
–
–
–
–
–
1.0
1.5
BCP 29
BCP 49
Unit
V
nA
nA
nA
–
V
A
A