M29W400 ST Microelectronics, M29W400 Datasheet - Page 20

• Manufacturer Part Number: M29W400
• Description: 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
• Manufacturer: ST Microelectronics

M29W400T, M29W400B
Table 16A. Write AC Characteristics, Chip Enable Controlled
(T
Notes: 1. Sample only, not 100% tested.
Erase Suspend (ES) Instruction. The Block
Erase operation may be suspendedby this instruc-
tion which consists of writing the command B0h
without any specific address. No Coded cycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
toggling when the P/E.C. is suspended.The Toggle
bits will stop toggling between0.1 s and 15 s after
the Erase Suspend (ES) command has been writ-
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t
PHPHH
Symbol
A
t
t
t
PHWL
EHRL
t
t
t
t
t
VCHWL
t
t
t
t
t
t
t
EHWH
WLEL
DVEH
EHDX
GHEL
EHGL
= 0 to 70 C, –20 to 85 C or –40 to 85 C)
AVAV
ELEH
EHEL
AVEL
ELAX
PLPX
2. This timing is for Temporary Block Unprotection operation.
(1,2)
(1)
(1)
t
t
t
t
t
BUSY
t
t
t
t
VIDR
Alt
t
t
t
t
OEH
t
CPH
t
VCS
RSP
WC
WS
WH
CP
DS
DH
AS
AH
RP
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
V
Chip Enable High to Output Enable Low
RP Rise TIme to V
RP Pulse Width
Program Erase Valid to RB Delay
RP High to Write Enable Low
CC
High to Write Enable Low
Parameter
ID
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
a block not being erased returns valid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It will result in both DQ2 and DQ6 toggling
when the data is being programmed. ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
V
CC
Min
500
500
90
45
45
30
45
50
0
0
0
0
0
0
4
C
= 3.0V to 3.6V
L
= 30pF
-90
M29W400T / M29W400B
Max
90
V
CC
Min
100
500
500
50
50
30
50
50
0
0
0
0
0
0
4
C
= 2.7V to 3.6V
L
-100
= 30pF
Max
90
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s