ISL70417SEHEVAL1Z INTERSIL [Intersil Corporation], ISL70417SEHEVAL1Z Datasheet

ISL70417SEHEVAL1Z

Manufacturer Part Number

ISL70417SEHEVAL1Z

Description

Rad Hard 40V Quad Precision Low Power Operational Amplifiers

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.ISL70417SEHEVAL1Z.pdf (22 pages)

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Rad Hard 40V Quad Precision Low Power Operational

Amplifiers

ISL70417SEH

The ISL70417SEH contains four very high precision amplifiers

featuring the perfect combination of low noise vs power

consumption. Low offset voltage, low I

temperature drift making them the ideal choice for applications

requiring both high DC accuracy and AC performance. The

combination of high precision, low noise, low power and small

footprint provides the user with outstanding value and flexibility

relative to similar competitive parts.

Applications for these amplifiers include precision active

filters, medical and analytical instrumentation, precision

power supply controls, and industrial controls.

The ISL70417SEH is offered in a 14 lead hermetic ceramic

flatpack package. The device is offered in an industry standard

pin configuration and operates over the extended temperature

range from -55°C to +125°C.

Applications

• Precision Instrumentation

• Spectral Analysis Equipment

• Active Filter Blocks

• Thermocouples and RTD Reference Buffers

• Data Acquisition

• Power Supply Control

July 2, 2012

FN7962.0

SALLEN-KEY LOW PASS FILTER (f

1.84k

FIGURE 1. TYPICAL APPLICATION

3.3nF

4.93k

8.2nF

ISL70417SEH

BIAS

current and low

= 10kHz)

OUTPUT

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

Features

• Electrically Screened to DLA SMD#

• Low Input Offset Voltage . . . . . . . . . . . . . . . . . . ±110µV, Max.

• Superb Offset Temperature Coefficient . . . . . . 1µV/°C, Max.

• Input Bias Current. . . . . . . . . . . . . . . . . . . . . . . . . . ±5nA, Max.

• Input Bias Current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.

• Low Current Consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA

• Voltage Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz

• Wide Supply Range . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V

• Operating Temperature Range. . . . . . . . . . .-55°C to +125°C

• Radiation Environment

* Product capability established by initial characterization. The

EH version is acceptance tested on a wafer by wafer basis to

50krad(Si) at low dose rate.

- SEL/SEB LET

- Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad(Si)

- Total Dose, Low Dose Rate . . . . . . . . . . . . . . . 100krad(Si) *

-2

-4

-6

-8

All other trademarks mentioned are the property of their respective owners.

FIGURE 2. V

= ±15V

SHIFT vs HIGH DOSE RATE RADIATION

100

= ±20V). . . . . . . . . 73.9 MeV•cm

GND

krad(Si)

150

BIAS

5962-12228

200

250

300

/mg

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