ADM810JART AD [Analog Devices], ADM810JART Datasheet - Page 2

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ADM810JART

Manufacturer Part Number
ADM810JART
Description
Microprocessor Supervisory Circuit in 3-Pin SOT-23
Manufacturer
AD [Analog Devices]
Datasheet

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ADM809/ADM810–SPECIFICATIONS
Parameter
RESET THRESHOLD
Reset Threshold Temperature Coefficient
V
Reset Active Timeout Period
RESET Output Voltage Low (ADM809)
RESET Output Voltage High (ADM809)
RESET Output Voltage Low (ADM810)
RESET Output Voltage High (ADM810)
ABSOLUTE MAXIMUM RATINGS*
(T
V
RESET, RESET . . . . . . . . . . . . . . . . . . –0.3 V to Vcc + 0.5 V
Input Current
Output Current
Rate of Rise, V
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADM809/ADM810 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
CC
CC
V
Supply Current
Reset Voltage Threshold
A
V
RESET, RESET . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
= +25 C unless otherwise noted)
CC
CC
ADM8_L
ADM8_L
ADM8_L
ADM8_M
ADM8_M
ADM8_M
ADM8_ J
ADM8_ J
ADM8_ J
ADM8_T
ADM8_T
ADM8_T
ADM8_S
ADM8_S
ADM8_S
ADM8_R
ADM8_R
ADM8_R
to Reset Delay
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Operating Voltage Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V/ s
Min
1.0
1.2
4.56
4.5
4.40
4.31
4.25
4.16
3.93
3.89
3.80
3.04
3.00
2.92
2.89
2.85
2.78
2.59
2.55
2.50
140
100
0.8 V
V
0.8 V
CC
–1.5
CC
CC
Typ
24
17
4.63 4.70
4.38 4.45
4.00 4.06
3.08 3.11
2.93 2.96
2.63 2.66
30
20
240
Max
5.5
5.5
60
50
100
100
4.75
4.86
4.5
4.56
4.10
4.20
3.15
3.23
3.00
3.08
2.70
2.76
560
840
0.3
0.4
0.3
0.3
0.4
–2–
Power Dissipation, RT-3 SOT-23 . . . . . . . . . . . . . . . . 320 mW
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300 C
Storage Temperature Range . . . . . . . . . . . . . –65 C to +150 C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum ratings for
extended periods of time may affect device reliability.
JA
Units
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
ppm/ C
ms
ms
V
V
V
V
V
V
V
V
(V
for T/S, 3 V for R Models unless otherwise noted.)
Derate by 4 mW/ C above +70 C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215 C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220 C
A
A
A
A
s
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . 333 C/W
CC
= Full Operating Range, T
Test Conditions/Comments
T
T
V
V
V
V
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
V
T
T
V
V
V
V
V
V
V
1.8 V < V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
= 0 C to +70 C
= –40 C to +105 C
= +25 C
= –40 C to +85 C
= +85 C to +105 C
= +25 C
= –40 C to +85 C
= +85 C to +105 C
= +25 C
= –40 C to +85 C
= +25 C
= –40 C to +85 C
= +85 C to +105 C
= +25 C
= –40 C to +85 C
= +85 C to +105 C
= +25 C
= –40 C to +85 C
= +85 C to +105 C
= –40 C to +85 C
= +85 C to +105 C
= +85 C to +105 C
< 5.5 V, ADM8_L/M, T
< 3.6 V, ADM8_R/S/T, T
< 5.5 V, ADM8_L/M, T
< 3.6 V, ADM8_R/S/T, T
> V
= V
= V
= V
>1.0 V, I
> V
= V
= V
TH
TH
TH
TH
TH
TH
TH
CC
max, I
to (V
min, I
min, I
max, I
min, I
min, I
< V
SINK
A
TH
TH
SOURCE
SINK
SINK
SINK
SINK
= T
SOURCE
= 50 A
–100 mV)
min, I
WARNING!
MIN
= 1.2 mA, ADM809R/S/T
= 3.2 mA, ADM809L/M
= 1.2 mA, ADM810R/S/T
= 3.2 mA, ADM810L/M
to T
= 500 A, ADM809R/S/T
= 800 A, ADM809L/M
SOURCE
MAX
A
A
A
A
= +85 C to +105 C
= –40 C to +85 C
, V
= +85 C to +105 C
= –40 C to +85 C
ESD SENSITIVE DEVICE
CC
= 150 A
typ = 5 V for L/M/J, 3.3 V
REV. 0

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