LX521 POLYFET [Polyfet RF Devices], LX521 Datasheet
LX521
Manufacturer Part Number
LX521
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Manufacturer
POLYFET [Polyfet RF Devices]
Datasheet
1.LX521.pdf
(2 pages)
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low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
General Description
SYMBOL
SYMBOL
"Polyfet"
Silicon VDMOS and LDMOS
VSWR
gM
Idss
Igss
Rdson
Idsat
Ciss
Crss
Coss
Gps
Bvdss
Vgs
220
Dissipation
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Device
Watts
Total
TM
Load Mismatch Tolerance
Zero Bias Drain Current
Forward Transconductance
Saturation Resistance
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
PARAMETER
Common Source Power Gain
Drain Efficiency
PARAMETER
Drain Breakdown Voltage
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
process features
t
Case Thermal
polyfet rf devices
Resistance
0.75 C/W
Junction to
o
Temperature
RF CHARACTERISTICS (
Maximum
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
ABSOLUTE MAXIMUM RATINGS ( T =
Junction
200
o
C
-65 C to 150 C
POLYFET RF DEVICES
Temperature
MIN
MIN
o
1
10
36
Storage
150.0
100.0
39.00
TYP
TYP
o
50
0.20
5.1
7.5
45.0
DC Drain
Current
MAX
MAX
22.0
1
7
1.0
5:1
WATTS OUTPUT )
A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Mho
RF POWER
Amp
pF
pF
dB
pF
mA
uA
%
V
V
HIGH EFFICIENCY, LINEAR
25 C )
o
Drain to
Voltage
HIGH GAIN, LOW NOISE
Idq =
Idq =
Idq = 0.80
TEST CONDITIONS
TEST CONDITIONS
70
Gate
45.0
Vds =
Ids =
Vgs = 20V, Ids =
Vds =
Vds =
Vds =
V
Vds = 0V Vgs = 30V
Vds = 10V, Vgs = 5V
Vgs = 20V, Vds = 10V
Ids =
Package Style
0.80
0.80
0.30
REVISION 07/17/2003
LDMOS
12.5
Watts
12.5
12.5
12.5
0.25
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Voltage
Source
70
Single Ended
16.00
V
TRANSISTOR
12.5
12.5
12.5
LX2
A
V, F =
V, F =
V, F =
LX521
Voltage
Source
Gate to
20
500
500
500
V
MHz
MHz
MHz
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