AT17LV010-10DP-MQ ATMEL [ATMEL Corporation], AT17LV010-10DP-MQ Datasheet - Page 9

• Manufacturer Part Number: AT17LV010-10DP-MQ
• Description: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1 MEGABIT SERIAL EEPROM, MONOLITHIC SILICON
• Manufacturer: ATMEL [ATMEL Corporation]

Notes :
(1)
(2)
(3)
(4)
(5)
(6)
Note : the above parameter shall be recorded before and after burn-in and life test to determine the delta.
CLK to data float
delay when
cascading (2)
CLK to
delay when
cascading (1)
delay when
cascading (1)
when cascading
(1)
CE
RESET
CEO
Output load gate equivalent +C
Float delays are measured with 5 pF AC loads. Transition is measured +/- 200 mV from steady-state active levels
Recorded
Go-no-go tested
This parameter is tested initially and after any design or process change which could affect this parameter,
and therefore shall be guaranteed to the limits specified
All the cases are tested, but only one is recorded (worst case) if required (note 3)
to
High level output
voltage
Low level output
voltage
Low level Input
current
High level Input
current
Supply current
Standby mode
delay
CEO
/OE to
CEO
Test
T
T
T
T
CDF
OCK
OCE
OOE
V
V
I
I
I
Sym
IL
IH
CCS
bol
OH
OL
3003
3003
3003
3003
As per table 2
As per table 2
As per table 2
As per table 2
As per table 2
Test method
L
Mil-Std-883
<30 pF
TABLE 2. Parameter drift values
V
V
V
V
DD
DD
DD
DD
= 3 V &V
= 3 V &V
= 3 V &V
= 3 V &V
As per table 2
As per table 2
As per table 2
As per table 2
As per table 2
DD
DD
DD
DD
= 3.6 V, F
= 3.6 V, F
= 3.6 V, F
= 3.6 V, F
in Table I
Conditions
MAX
MAX
MAX
MAX
50
55
40
40
limits
Drift
0.1
0.1
0.5
0.5
15
ns
ns
ns
ns
PS-AT17LV010
V
V
μA
μA
µA
Unit
Sheet 9 / 15
4
3
3
3
Rev A