IR21141SSPBF_09 IRF [International Rectifier], IR21141SSPBF_09 Datasheet - Page 20

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IR21141SSPBF_09

Manufacturer Part Number
IR21141SSPBF_09
Description
HALF-BRIDGE GATE DRIVER IC
Manufacturer
IRF [International Rectifier]
Datasheet
www.irf.com
In any case, the worst condition for unwanted turn on is
with very fast steps on the IGBT collector.
In that case, the collector to gate transfer function can
be approximated with the capacitor divider:
R
IRGP30B120K(D)
DRn
IRGP30B120K(D)
IRG4PH30K(D)
IRG4PH30K(D)
=
IGBT
Vcc
IGBT
I
o
V
ge
=
V
de
19 nC
10 nC
Qge
(
19 nC
10 nc
C
Qge
RESoff
IRGP30B120K(D)
C
IRG4PH30K(D)
RESoff
82 nC
20 nC
Qgc
+
IGBT
82 nC
20 nC
C
Qgc
IES
Table 2: dV
Vge*
)
9 V
9 V
Table 1: t
Vge*
9 V
9 V
Table 3: R
400 ns
200 ns
tsw
OUT
Vth(min)
sw
CRESoff
85 pF
14 pF
/dt Driven R
Driven R
4
3
20
0.25 A
0.15 A
Goff
Iavg
Sizing
CRESoff
Gon
which is driven only by IGBT characteristics.
As an example, table 3 reports R
above mentioned disequation) for two popular IGBTs to
withstand dV
NOTICE: The above-described equations are intended
to approximate a way to size the gate resistance. A
more accurate sizing may provide more precise device
and PCB (parasitic) modelling.
14 Ω
85 Ω
85 pF
14 pF
Rtot
Gon
24 Ω
40 Ω
Sizing
Rtot
Sizing
RTOT - RDRp = 6.5
RGon → std commercial value
RTOT - RDRp = 78
RTOT - RDRp = 12.7
RTOT - RDRp = 32.5
RGoff ≤ 35
RGon → std commercial value
RGoff ≤ 4
out
/dt = 5 V/ns .
RGoff
IR21141/IR22141SSPbF
© 2009 International Rectifier
→ 8.2
→ 82
Goff
→ 10
→ 33
(calculated with the
→ 4.5 V/ns
dVout/dt
→ 5 V/ns
→ 420 ns
→ 202 ns
Tsw

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