STM8L151K6U3 STMICROELECTRONICS [STMicroelectronics], STM8L151K6U3 Datasheet - Page 89

• Manufacturer Part Number: STM8L151K6U3
• Description: 8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STM8L151xx, STM8L152xx
8.3.14
Figure 20. Power supply and reference decoupling (V
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
Doc ID 15962 Rev 2
1 µF // 10 nF
V
V
REF+
REF–
STM8L
/V
/V
REF+
DDA
SSA
connected to
Electrical parameters
ai17032
V
DDA
DD
)
and V
89/101
SS