VP0104_07 SUTEX [Supertex, Inc], VP0104_07 Datasheet

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VP0104_07

Manufacturer Part Number
VP0104_07
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
Supertex inc.
Ordering Information
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Supertex inc.
displays, bipolar transistors, etc.)
BV
BV
-40V
-60V
-90V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
8.0Ω
8.0Ω
8.0Ω
DS(ON)
·
1235 Bordeaux Drive, Sunnyvale, CA 94089
(min)
I
-0.5A
-0.5A
-0.5A
D(ON)
P-Channel Enhancement-Mode
Vertical DMOS FETs
-55
o
C to +150
Order Number / Package
BV
BV
300
± 20V
VP0104N3
VP0106N3
VP0109N3
DGS
DSS
o
o
C
C
TO-92
1
·
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Tel: (408) 222-8888
Note: See Package Outline section for dimensions.
VP0104/VP0106/VP0109
·
FAX: (408) 222-4895
TO-92
S G D
·
www.supertex.com

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VP0104_07 Summary of contents

Page 1

Supertex inc. Ordering Information DSS DS(ON) BV (max) DGS -40V 8.0Ω -60V 8.0Ω -90V 8.0Ω Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low C and fast switching speeds ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 -0.25A * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature ...

Page 3

Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0 -10 -20 V (volts) DS Transconductance vs. Drain Current 250 V = -25V DS 200 150 100 -0.2 -0.4 I (amperes) D Maximum Rated Safe ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS DSS 1.10 1.06 1.02 0.98 0.94 0.90 - Transfer Characteristics -1 -25V DS -0 -0.6 -0.4 -0 (volts) ...

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