ZXMHC6A07T8TC ZETEX [Zetex Semiconductors], ZXMHC6A07T8TC Datasheet - Page 5

• Manufacturer Part Number: ZXMHC6A07T8TC
• Description: COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
• Manufacturer: ZETEX [Zetex Semiconductors]

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JULY 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
I
R
g
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
V
I
V
C
amb
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
5
MIN.
-1.0
-60
-0.85
TYP.
17.4
22.6
23.2
233
1.8
9.6
1.6
2.3
5.8
2.4
5.1
0.7
0.7
13
MAX.
0.425
0.630
-0.95
100
-1
ZXMHC6A07T8
UNIT CONDITIONS
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250µA, V
=-250µA, V
=-0.9A
=-0.9A
GS
=25°C, I
=25°C, I
S E M I C O N D U C T O R S
≅
=-60V, V
=-15V,I
=-30 V, V
=-30V,V
=-30V,V
=-10V, I
=-4.5V, I
6.0
=0V
=±20V, V
=-30V, I
Ω, V
S
F
GS
D
=-0.9A,
=-0.8A,
D
GS
GS
=-0.9A
D
GS
D
=-0.9A
GS
DS
GS
=-10V
=-1A
DS
=-0.8A
=-5V,
=-10V,
=0V
=0V
= V
=0V,
=0V
GS