SSM6N55NU TOSHIBA [Toshiba Semiconductor], SSM6N55NU Datasheet - Page 3

• Manufacturer Part Number: SSM6N55NU
• Description: Power Management Switches DC-DC Converters
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

5. 5. 5. 5. Electrical Characteristics
5.1.
5.1.
5.2.
5.2.
5.3.
5.3.
5.4.
5.4.
5.1.
5.1. Static Characteristics (T
5.2.
5.2. Dynamic Characteristics (T
5.3.
5.3. Switching Time Test Circuit
5.4.
5.4. Gate Charge Characteristics (T
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Note 1: If a reverse bias is applied between gate and source, this device enters V
Note 2: Let V
Note 3: Pulse measurement.
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Static Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Switching Time Test Circuit
Switching Time Test Circuit
Gate Charge Characteristics (T
Gate Charge Characteristics (T
(Q1,Q2 Common)
(Q1,Q2 Common)
(Q1,Q2 Common)
Static Characteristics (T
Dynamic Characteristics (T
Switching Time Test Circuit
Gate Charge Characteristics (T
(Q1,Q2 Common)
Fig.
Fig.
Fig.
Fig. 5.3.1
source breakdown voltage is lowered in this mode.
this device). Then, for normal switching operation, V
lower than V
Take this into consideration when using the device.
5.3.1
5.3.1
5.3.1 Test Circuit of Switching Time
th
Characteristics
be the voltage applied between gate and source that causes the drain current (I
Characteristics
Characteristics
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
th
. This relationship can be expressed as: V
(Note 3)
(Note 1)
(Note 2)
(Note 3)
a a a a
= 25
= 25
= 25    unless otherwise specified)(Q1,Q2 Common)
= 25
a a a a
= 25
= 25
V
V
= 25    unless otherwise specified)(Q1,Q2 Common)
= 25
Symbol
R
Symbol
(BR)DSS
(BR)DSX
DS(ON)
I
I
|Y
C
C
C
GSS
DSS
V
t
t
Symbol
on
off
a a a a
oss
rss
iss
th
fs
Q
Q
Q
|
= 25
= 25
unless otherwise specified)(Q1,Q2 Common)
unless otherwise specified)(Q1,Q2 Common)
= 25
= 25    unless otherwise specified)
unless otherwise specified)(Q1,Q2 Common)
gs1
gd
g
V
V
I
I
V
I
I
V
V
f = 1 MHz
V
V
Duty ≤ 1%, Input: t
Ground source, See Chapter 5.3
D
D
D
D
unless otherwise specified)(Q1,Q2 Common)
unless otherwise specified)(Q1,Q2 Common)
unless otherwise specified)(Q1,Q2 Common)
GS
DS
DS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
= 4.0 A, V
= 2.0 A, V
V
I
D
3
DD
= 30 V, V
= 10 V, I
= 10 V, I
= 15 V, V
= ±20 V, V
= 15 V, I
= 0 to 4.5 V, R
= 4.0 A
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
= 15 V, V
Test Condition
Test Condition
GS(ON)
Fig.
Fig.
Fig.
Fig. 5.3.2
Test Condition
GS
GS
D
D
D
GS
GS
GS
GS(OFF)
GS
= 0.1 mA
= 1.0 A
= 0.5 A
DS
= 10 V
= 4.5 V
GS
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
= 0 V
= -20 V
= 0 V
= 0 V,
= 0 V
must be higher than V
r
G
, t
= 4.5 V,
= 10 Ω,
f
< 5 ns
< V
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
th
< V
GS(ON)
(BR)DSX
Min
Min
Min
1.3
3.4
30
10












.
mode. Note that the drain-
th
, and V
D
Typ.
Typ.
Typ.
280
6.8
2.5
1.6
0.5
33
48
20
53
15
12





) to below (0.1 mA for
SSM6N55NU
GS(OFF)
2012-07-19
Max
Max
Max
±10
2.5


46
64









1
Rev.1.0
must be
Unit
Unit
Unit
mΩ
µA
nC
pF
ns
V
S