SSM3K04FE_07 TOSHIBA [Toshiba Semiconductor], SSM3K04FE_07 Datasheet
SSM3K04FE_07
Manufacturer Part Number
SSM3K04FE_07
Description
High Speed Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.SSM3K04FE_07.pdf
(5 pages)
High Speed Switching Applications
•
•
•
•
Absolute Maximum Ratings
Marking
With built-in gate-source resistor: R
2.5 V gate drive
Low gate threshold voltage: V
Small package
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
th
= 0.7~1.3 V
SSM3K04FE
(Ta = 25°C)
GS
Symbol
V
V
T
T
P
GSS
I
= 1 MΩ (typ.)
DS
stg
D
ch
D
−55~150
Rating
100
100
150
20
10
1
Equivalent Circuit
Unit
mW
mA
°C
°C
V
V
Weight: 2.3 mg (typ.)
JEDEC
JEITA
TOSHIBA
SSM3K04FE
2-2HA1B
2007-11-01
―
―
Unit: mm
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SSM3K04FE_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications • With built-in gate-source resistor: R • 2.5 V gate drive • Low gate threshold voltage • Small package Absolute Maximum Ratings Characteristics Drain-source voltage ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Gate-source resistor Switching Time Test Circuit ...
Page 3
SSM3K04FE 2007-11-01 ...
Page 4
SSM3K04FE 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...