ADG406 Analog Devices, ADG406 Datasheet - Page 2

• Manufacturer Part Number: ADG406
• Description: LC2MOS 8-/16-Channel High Performance Analog Multiplexers
• Manufacturer: Analog Devices

Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
N
1
2
Specifications subject to change without notice.
Guaranteed by design, not subject to production test.
ADG406/ADG407/ADG426–SPECIFICATIONS
DUAL SUPPLY
Temperature ranges are as follows: B Versions: –40 C to +85 C; T Versions: –55 C to +125 C.
OTES
Analog Signal Range
R
R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
Break Before Make Delay, t
t
t
ADG426 Only
Charge Injection
OFF Isolation
Channel-to-Channel Crosstalk
C
C
C
I
I
I
I
TRANSITION
ON
OFF
DD
SS
DD
SS
ON
ON
IN
S
D
D
ADG406, ADG426
ADG407
ADG406, ADG426
ADG407
I
t
t
t
t
ADG406, ADG426
ADG407
ADG406, ADG426
ADG407
, C
(OFF)
INL
, Digital Input Capacitance
W
S
H
RS
(OFF)
(EN, WR)
(EN, RS)
, Address, Enable Setup Time
, Address, Enable Hold Time
, Write Pulse Width
Match
, Reset Pulse Width
S
or I
(ON)
INH
D
INL
INH
S
(OFF)
D
(OFF)
, I
(V
DD
S
(ON)
OPEN
= +15 V
2
25
40
+25 C
50
80
4
8
120
150
10
120
160
110
150
8
–75
85
5
50
60
100
200
10%, V
0.5
1
1
1
1
B Version
SS
= –15 V
–40 C to
+85 C
V
125
2.4
0.8
250
10
175
225
130
180
100
100
10
100
1
5
1
5
500
1
5
SS
20
20
20
20
20
1
to V
DD
10%, GND = 0 V, unless otherwise noted)
+25 C
50
80
4
8
120
150
10
120
160
110
150
8
–75
85
5
50
25
60
40
100
200
0.5
1
1
1
1
T Version
–2–
–55 C to
+125 C
V
125
2.4
0.8
250
10
175
225
130
180
100
100
10
100
1
5
1
5
500
1
5
SS
50
200
100
200
100
1
to V
DD
Units
V
nA max
nA max
nA max
nA max
nA max
V min
V max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
A max
A typ
A max
A typ
A max
A typ
A max
A typ
A max
1
typ
max
typ
Test Conditions/Comments
V
V
V
V
V
V
Test Circuit 3
V
Test Circuit 4
V
f = 1 MHz
R
V
Test Circuit 5
R
V
R
V
R
V
V
V
Test Circuit 10
R
V
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
V
V
D
DD
D
DD
D
D
S
IN
L
1
L
S
L
S
L
S
S
S
L
EN
L
DD
IN
IN
= 10 V, V
= V
= +5 V, Test Circuit 6
= +5 V, Test Circuit 7
= +5 V, Test Circuit 7
= +5 V
= 0 V, R
= 300 , C
= 300 , C
= 300 , C
= 300 , C
= 1 k , f = 100 kHz;
= 1 k , f = 100 kHz, Test Circuit 12
= 10 V, I
= 0 V, I
= 10 V, V
= 10 V, V
= 0 or V
= 0 V, V
= 0 V, V
= 0 V, Test Circuit 11
= +13.5 V, V
= +16.5 V, V
= +16.5 V, V
D
= 10 V;
S
S
DD
EN
EN
= –1 mA
= 0 , C
S
2
S
S
L
L
L
L
= 0 V
= 2.4 V
= –1 mA
=
=
=
= 35 pF;
= 35 pF;
= 35 pF;
= 35 pF;
SS
SS
SS
10 V;
= –13.5 V
= –16.5 V
10 V, Test Circuit 2
10 V;
= –16.5 V
L
= 1 nF;
REV. 0