TP2435N8 Supertex Inc, TP2435N8 Datasheet

TP2435N8

Manufacturer Part Number

TP2435N8

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TP2435N8.pdf (4 pages)

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Ordering Information

** Die in wafer form.

Features

Applications

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Distance of 1.6 mm from case for 10 seconds.

Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Low threshold

High input impedance

Low input capacitance

Fast switching speeds

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Logic level interfaces

Solid state relays

Linear Amplifiers

Power Management

Analog switches

Telecom switches

-350V

DSS

DGS

(max)

DS(ON)

15Ω

(max)

-2.4V

GS(th)

P-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

-800mA

(min)

D(ON)

300°C

± 20V

DGS

DSS

TO-243AA*

TP2435N8

Order Number / Package

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) power

transistors utilize a vertical DMOS structure and Supertex's well-

proven silicon-gate manufacturing process. This combination

produces devices with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefficient inherent in MOS devices. Characteristic

of all MOS structures, these devices are free from thermal

runaway and thermally induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Option

where ❋ = 2-week alpha date code

Note: See Package Outline section for dimensions.

Product marking for TO-243AA:

TP2435NW

TP4S❋

Die**

TO-243AA

(SOT-89)

Low Threshold

TP2435

Related parts for TP2435N8

TP2435N8 Summary of contents

Page 1

... GS(th) D(ON) (max) (min) TO-243AA* -2.4V -800mA TP2435N8 Product marking for TO-243AA: where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well- proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices ...

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TP2435N8 Supertex Inc, TP2435N8 Datasheet

TP2435N8

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TP2435N8 Summary of contents

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