AT866S36 Power Semiconductors, AT866S36 Datasheet
AT866S36
Manufacturer Part Number
AT866S36
Description
PHASE CONTROL THYRISTOR
Manufacturer
Power Semiconductors
Datasheet
1.AT866S36.pdf
(4 pages)
R
R
V
V
V
I² t
V
V
di/dt
dv/dt
td
tq
Q rr
V
V
V
I
V
P
P
T
F
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Symbol
r
I
I
I
I
I
I rr
I
I
I
feb 97 - ISSUE : 02
RRM
RSM
DRM
RRM
DRM
T (AV)
T (AV)
TSM
T
T(TO)
T
H
L
GT
GT
GD
FGM
FGM
RGM
GM
G
th(j-h)
th(c-h)
j
BLOCKING
CONDUCTING
SWITCHING
GATE
MOUNTING
ANSALDO
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Mean on-state current
Mean on-state current
Surge on-state current
I² t
On-state voltage
Threshold voltage
On-state slope resistance
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
Latching current, typical
Gate trigger voltage
Gate trigger current
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Mass
Characteristic
ORDERING INFORMATION : AT866 S 36
standard specification
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
V=VRRM
V=VDRM
180° sin, 50 Hz, Th=55°C, double side cooled
180° sin, 50 Hz, Tc=85°C, double side cooled
sine wave, 10 ms
without reverse voltage
On-state current =
From 75% VDRM up to 2400 A, gate 40V 5ohm 125
Linear ramp up to 70% of VDRM
VD=100V, gate source 40V, 10 ohm , tr=.5 µs
dV/dt = 20 V/µs linear up to 75% VDRM
di/dt=-20 A/µs, I= 1570 A
VR= 50 V
VD=5V, gate open circuit
VD=12V, tp=30µs
VD=12V
VD=12V
VD=VDRM
Pulse width 100 µs
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
Conditions
Repetitive voltage up to
Mean on-state current
Surge current
AT866
VDRM&VRRM/100
2000 A
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Tx 270318 ANSUSE I -
Fax Int. +39/(0)10 6442510
[°C]
125
125
125
125
125
125
125
125
125
125
125
25
25
25
25
25
25
Tj
3600
2165
29.1
0.325
40.0 / 50.0
3600
3700
3600
2165
1720
4234 x1E3
1000
1000
1700
29.1
1.85
0.25
-30 / 125
250
250
200
400
300
400
150
1.2
3.5
Value
30
10
11
3
5
2
2
V
A
kA
mohm
°C/kW
°C/kW
Unit
A/µs
V/µs
mA
mA
A²s
mA
mA
mA
µC
kA
µs
µs
°C
kN
W
W
A
A
A
A
V
V
V
V
V
V
V
V
V
g
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AT866S36 Summary of contents
Page 1
ANSALDO PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic BLOCKING V Repetitive peak reverse voltage RRM V Non-repetitive peak reverse voltage RSM V Repetitive peak off-state voltage DRM I Repetitive peak reverse current RRM I ...
Page 2
AT866 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 Th [°C] 130 120 110 100 500 P [W] F(AV) 7000 6000 5000 4000 3000 2000 1000 0 0 500 DISSIPATION CHARACTERISTICS ...
Page 3
AT866 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 Th [°C] 130 120 110 100 90 30° 500 P [W] F(AV) 7000 6000 5000 4000 3000 2000 1000 0 0 500 DISSIPATION ...
Page 4
AT866 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 02 ON-STATE CHARACTERISTIC Tj = 125 °C 7000 6000 5000 4000 3000 2000 1000 0 0.6 1.1 1.6 2.1 On-state Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 12.0 ...