K4S560432E-NC(L)75 Samsung semiconductor, K4S560432E-NC(L)75 Datasheet - Page 7

• Manufacturer Part Number: K4S560432E-NC(L)75
• Description: 256Mb E-die SDRAM Specification 54pin sTSOP-II
• Manufacturer: Samsung semiconductor

SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
0
Parameter
~ DQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
3
supply relative to Vss
), (x8 : DQ
(V
DD
0
Pin
IN
= 3.3V, T
~ DQ
≤ V
DDQ
7
), (x16 : DQ
V
Symbol
DD
A
.
V
V
= 23°C, f = 1MHz, V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
0
~ DQ
15
V
V
Symbol
Min
-0.3
)
DD
3.0
2.0
2.4
-10
IN
T
-
, V
I
P
, V
STG
OS
REF
D
OUT
DDQ
SS
Symbol
C
C
C
=1.4V ± 200 mV)
= 0V, T
C
ADD
OUT
CLK
IN
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
Min
2.5
2.5
2.5
4.0
V
DD
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
+0.3
Value
50
1
Max
3.5
3.8
3.8
6.0
Rev. 1.0 August, 2003
Unit
uA
V
V
V
V
V
CMOS SDRAM
Unit
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note