K6R1008C1B- Samsung semiconductor, K6R1008C1B- Datasheet - Page 3

• Manufacturer Part Number: K6R1008C1B-
• Description: 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

K6R1008C1B-C, K6R1008C1B-I
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
CAPACITANCE
* Capacitance is sampled and not 100% tested.
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
** V
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
Input/Output Capacitance
Input Capacitance
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
The above parameters are also guaranteed at industrial temperature range.
CC
IL
IH
=5.0V 5%, Temp.=25 C.
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
CC
CC
Item
+ 2.0V a.c (Pulse Width 6ns) for I
Supply Relative to V
*
Parameter
(T
A
=25 C, f=1.0MHz)
Commercial
Industrial
6ns) for I 20mA.
SS
Symbol
V
SS
I
V
V
OH1
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
Symbol
**
V
V
Symbol
V
V
CC
SS
IH
IL
C
C
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
IN
OUT
IN
20mA.
=8mA
=-4mA
= V
=0mA
=-0.1mA
V
=V
IH
IL,
CC
SS
SS
or OE=V
V
-0.2V or V
IN
to V
to V
=V
-0.5**
CC
Test Conditions
Min
IH
4.5
2.2
CC
Test Conditions
(T
0
CC
- 3 -
V
or V
IH
Symbol
A
IH
IN
-0.2V,
IN
T
V
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
or WE=V
V
V
, V
P
T
T
STG
I/O
IN
CC
IL,
D
A
A
0.2V
OUT
=0V
=0V
(T
A
=0 to 70 C)
IL
Typ
5.0
0
-
-
10ns
12ns
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
8ns
-40 to 85
MIN
Rating
0 to 70
-
-
1.0
V
CC
Max
Min
2.4
5.5
+ 0.5***
0.8
-2
-2
0
-
-
-
-
-
-
-
CMOS SRAM
PRELIMINARY
Max
8
6
Preliminary
PRELIMINARY
PRELIMINARY
Max
3.95
160
155
150
0.4
50
10
2
2
-
February 1998
Unit
W
V
V
C
C
C
Unit
V
V
V
V
Unit
pF
pF
Rev 2.0
Unit
mA
mA
mA
V
V
V
A
A