GS74116A GSI [GSI Technology], GS74116A Datasheet - Page 7

• Manufacturer Part Number: GS74116A
• Description: 256K x 16 4Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

Read Cycle 2: WE = V
Write Cycle
* These parameters are sampled and are not 100% tested.
Rev: 1.03 10/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
IH
Address
CE
UB, LB
OE
Data Out
Symbol
tWHZ
tWLZ
tWR1
tWC
tCW
tDW
tWR
tAW
tBW
tWP
tDH
tAS
*
*
High impedance
Min
3.5
—
7
5
5
5
0
5
0
0
0
3
7/14
-7
tLZ
tOLZ
Max
tBLZ
—
—
—
—
—
—
—
—
—
—
—
3
tAA
tAC
Min
tAB
5.5
5.5
5.5
5.5
—
tRC
tOE
8
4
0
0
0
3
0
-8
Max
3.5
—
—
—
—
—
—
—
—
—
—
—
Data valid
Min
4.5
10
—
7
7
7
0
7
0
0
0
3
tBHZ
tOHZ
tHZ
-10
Max
—
—
—
—
—
—
—
—
—
—
—
4
© 2001, Giga Semiconductor, Inc.
Min
12
—
GS74116ATP/J/X
8
8
8
6
0
8
0
0
0
3
-12
Max
—
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns