RFD14N06LSM Intersil Corporation, RFD14N06LSM Datasheet

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RFD14N06LSM

Manufacturer Part Number
RFD14N06LSM
Description
Manufacturer
Intersil Corporation
Datasheets

Specifications of RFD14N06LSM

Date_code
08+
14A, 60V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.
Packaging
RFD14N06L
RFD14N06LSM
RFP14N06L
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
TO-220AB
JEDEC TO-251AA
PACKAGE
6-1
Data Sheet
SOURCE
14N06L
14N06L
FP14N06L
DRAIN
GATE
DRAIN (FLANGE)
BRAND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
RFD14N06L, RFD14N06LSM, RFP14N06L
JEDEC TO-220AB
http://www.intersil.com or 407-727-9207
Features
• 14A, 60V
• r
• Temperature Compensating PSPICE
• Can be Driven Directly from CMOS, NMOS, and TTL
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
Circuits
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
o
SOURCE
C Operating Temperature
DRAIN
= 0.100
GATE
PSPICE® is a registered trademark of MicroSim Corporation.
GATE
July 1999
SOURCE
JEDEC TO-252AA
G
|
Copyright
D
S
DRAIN (FLANGE)
File Number 4088.3
©
®
Intersil Corporation 1999
Model

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