NTF3055L108T3 ON Semiconductor, NTF3055L108T3 Datasheet

NTF3055L108T3

Manufacturer Part Number

NTF3055L108T3

Description

Manufacturer

ON Semiconductor

Datasheets

1.NTF3055L108.pdf (6 pages)

2.NTF3055L108T3.pdf (6 pages)

Specifications of NTF3055L108T3

Case

SOT-223

Date_code

08+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF3055L108T3

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF3055L108T3G

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF3055L108T3G

Manufacturer:

Quantity:

12 500

Company:

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Part Number:

NTF3055L108T3G

Manufacturer:

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Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF3055L108T3LF

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF3055L108T3LFG

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

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NTF3055L108

Power MOSFET

3.0 A, 60 V, Logic Level, N−Channel

SOT−223

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

2. When surface mounted to an FR4 board using minimum recommended pad

December, 2005 − Rev. 4

MAXIMUM RATINGS

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Designed for low voltage, high speed switching applications in

Pb−Free Packages are Available

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

(Cu. Area 0.0995 in

size, 2−2.4 oz. (Cu. Area 0.272 in

− Continuous @ T

− Single Pulse (t

Derate above 25°C

Energy − Starting T

Purposes, 1/8″ from case for 10 seconds

L(pk)

− Continuous

− Non−repetitive (t

−Junction−to−Ambient (Note 1)

−Junction−to−Ambient (Note 2)

= 7.0 Apk, L = 3.0 mH, V

= 25 Vdc, V

Rating

≤ 10 ms)

= 25°C

= 100°C

= 5.0 Vdc,

= 25°C

≤ 10 ms)

= 25°C unless otherwise noted)

Preferred Device

= 1.0 MW)

= 25°C (Note 1)

= 25°C (Note 2)

= 60 Vdc)

Symbol

DSS

DGR

, T

qJA

stg

to 175

Value

0.014

± 15

± 20

72.3

−55

114

260

3.0

1.4

9.0

2.1

1.3

Watts

W/°C

°C/W

Unit

Vdc

Vpk

Adc

Apk

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

3055L

(Note: Microdot may be in either location)

ORDERING INFORMATION

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

MARKING DIAGRAM

DS(on)

PIN ASSIGNMENT

http://onsemi.com

Gate

3.0 A, 60 V

N−Channel

Drain

= 120 mW

Publication Order Number:

Drain

Source

CASE 318E

SOT−223

STYLE 3

NTF3055L108/D

3055LG

AYW

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