IRFR5305TRRPBF International Rectifier Corp., IRFR5305TRRPBF Datasheet

IRFR5305TRRPBF

Manufacturer Part Number

IRFR5305TRRPBF

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRFR5305TRRPBF.pdf (10 pages)

Specifications of IRFR5305TRRPBF

Case

D-pak

Date_code

08+

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www.irf.com

Description

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET

the designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

θJC

θJA

@ T

Surface Mount (IRFR5305)

Advanced Process Technology

Ultra Low On-Resistance

Straight Lead (IRFU5305)

Fast Switching

Fully Avalanche Rated

Lead-Free

= 100 C

= 25 C

Power MOSFETs are well known for, provides

Continuous Drain Current, V

Pulsed Drain Current †

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚†

Avalanche Current†

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ†

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient**

Parameter

@ -10V

Typ.

IRFR5305

300 (1.6mm from case )

–––

D-Pak

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

Max.

-110

0.71

± 20

-5.0

110

280

-31

-22

-16

IRFR5305PbF

IRFU5305PbF

DS(on)

IRFU5305

Power MOSFET

DSS

Max.

I-Pak

110

1.4

= -31A

= 0.065Ω

= -55V

PD-95025A

Units

W/ C

V/ns

12/13/04

C/W

°C

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